This paper investigates the concurrent operation of a commercially available, modulated impedance synthesis and measurement system with digital pre-distortion (DPD) for industry standard modulated signals. The system was used to characterize a 10W GaN HEMT device, and provide impedance control over signal and distortion bandwidths, in response to a 10 MHz LTE signal centred at 2 GHz, and was able to rapidly achieve target reflection coefficients with an error less than −40dB (1%). A National Instruments (NI) PXi based characterisation system was used to apply a commercially available memory-based DPD algorithm. The transistor was biased in class-AB and was successfully linearised to better than −47.95 dBc ACPR when delivering at 2.5W averag...
This paper examines the application of a broadband modulated measurement system, and specifically ho...
This paper presents a refined multitone measurement system for the robust characterization of nonlin...
In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0...
This Letter presents a novel characterisation system that is able to fully emulate a complete envelo...
This paper investigates the concurrent operation of a commercially available, modulated impedance sy...
In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions t...
This paper demonstrates how the linearity performance of a 10 W GaN HEMT can be dramatically improve...
This paper presents two linearization strategies for a custom-designed wideband push-pull (PP) power...
Energy-efficient power amplifiers capable of supporting advanced communication standards are essenti...
An advanced active load-pull pulse profiling (ALPPP) system is presented to identify and track, for ...
This paper analyzes the effects of load impedancemismatch in power amplifiers which linearity has be...
Characterisation of modern wireless power transistors and amplifies requires wideband-modulated stim...
This paper investigates and presents comparative performance of three different digital predistortio...
Microwave power transistors used in modern day wireless communication systems need to be characteris...
In this paper we report a method of applying digitally modulated signals to an RF power transistor i...
This paper examines the application of a broadband modulated measurement system, and specifically ho...
This paper presents a refined multitone measurement system for the robust characterization of nonlin...
In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0...
This Letter presents a novel characterisation system that is able to fully emulate a complete envelo...
This paper investigates the concurrent operation of a commercially available, modulated impedance sy...
In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions t...
This paper demonstrates how the linearity performance of a 10 W GaN HEMT can be dramatically improve...
This paper presents two linearization strategies for a custom-designed wideband push-pull (PP) power...
Energy-efficient power amplifiers capable of supporting advanced communication standards are essenti...
An advanced active load-pull pulse profiling (ALPPP) system is presented to identify and track, for ...
This paper analyzes the effects of load impedancemismatch in power amplifiers which linearity has be...
Characterisation of modern wireless power transistors and amplifies requires wideband-modulated stim...
This paper investigates and presents comparative performance of three different digital predistortio...
Microwave power transistors used in modern day wireless communication systems need to be characteris...
In this paper we report a method of applying digitally modulated signals to an RF power transistor i...
This paper examines the application of a broadband modulated measurement system, and specifically ho...
This paper presents a refined multitone measurement system for the robust characterization of nonlin...
In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0...