Low cost reactively matched broadband GaAs MMIC power amplifier for airborne applications

A highly efficient, single stage broadband power amplifier was designed and fabricated in WIN Semiconductor 0.10 μm GaAs technology. Reactive matching networks were used to optimize the broadband performance in Class AB topology. This was obtained by iterating the load and source fundamental impedances to achieve the highest PAE with the second harmonic load termination short circuited. Measured results at 10 GHz show a saturated output power of around 27 dBm, drain efficiency as high as 71.2% and a PAE of 64.1% with a small signal gain of 16.5 dB and a large signal gain of 12.9 dB. The amplifier has excellent broadband characteristics and the highest reported drain efficiency (DE) of over 50% between 7-13 GHz