This paper presents three power amplifiers designed for 15 GHz microwave radio application employing GaN 0.25 μm technology. The first design is a 3W combined power amplifier, the second is a 7-15 GHz dual-band 3 W combined power amplifier, and the third is a 4W Doherty power amplifier. Advantages and limitations of GaN 0.25 μm technology applied to the three different design solutions for this specific application are discussed, presenting and comparing the measurement results obtained on the developed amplifiers
This paper presents the design and implementation of power amplifiers using high-power gallium nitri...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
Gallium nitride integrated technology is very promising not only for wireless applications at mobile...
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing...
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing...
This letter presents an integrated Doherty power amplifier (PA) in 0.25- μm GaN on SiC process. Desi...
This paper presents the progress of monolithic technology for microwaveapplication, focusing on gall...
Design and characterization of a dual-band (7 GHz and 15 GHz) MMIC GaN linear Power Amplifier are pr...
An MMIC GaN Doherty power amplifier is presented. This amplifier, optimized for C-band Microwave Rad...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
The Doherty power amplifier is competing with class-AB amplifiers in mobile base-stations,...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper d...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
Gallium nitride integrated technology is very promising not only for wireless applications at mobile...
This paper presents the design and implementation of power amplifiers using high-power gallium nitri...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
Gallium nitride integrated technology is very promising not only for wireless applications at mobile...
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing...
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing...
This letter presents an integrated Doherty power amplifier (PA) in 0.25- μm GaN on SiC process. Desi...
This paper presents the progress of monolithic technology for microwaveapplication, focusing on gall...
Design and characterization of a dual-band (7 GHz and 15 GHz) MMIC GaN linear Power Amplifier are pr...
An MMIC GaN Doherty power amplifier is presented. This amplifier, optimized for C-band Microwave Rad...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
The Doherty power amplifier is competing with class-AB amplifiers in mobile base-stations,...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper d...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
Gallium nitride integrated technology is very promising not only for wireless applications at mobile...
This paper presents the design and implementation of power amplifiers using high-power gallium nitri...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
Gallium nitride integrated technology is very promising not only for wireless applications at mobile...