We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal–organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immu...
AbstractSingle InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been ...
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is ...
2 páginas, 2 figuras.-- Trabajo presentado a la XIIth International Conference on Molecular Beam Epi...
We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adju...
International audienceWe study the optical properties of InAs/InP QD-NWs grown on silicon by solid s...
A compact, efficient, and monolithically grown III–V laser source provides an attractive alternative...
(In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa st...
The authors report on the optical properties of 3-fold stacked InGaAs sidewall quantum wires (QWires...
III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the deve...
On-chip quantum light sources on silicon photonic platforms have been the primary building block for...
A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrate...
International audienceIII-V semiconductor nanowires (NWs) are promising building blocks for photonic...
For a certain heteroepitaxial system, the optical properties of self-assembled nanostructures basica...
Abstract We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111)...
We report continuous-wave lasing from InP/InGaAs nanoridges grown on a patterned (001) Si substrate ...
AbstractSingle InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been ...
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is ...
2 páginas, 2 figuras.-- Trabajo presentado a la XIIth International Conference on Molecular Beam Epi...
We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adju...
International audienceWe study the optical properties of InAs/InP QD-NWs grown on silicon by solid s...
A compact, efficient, and monolithically grown III–V laser source provides an attractive alternative...
(In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa st...
The authors report on the optical properties of 3-fold stacked InGaAs sidewall quantum wires (QWires...
III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the deve...
On-chip quantum light sources on silicon photonic platforms have been the primary building block for...
A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrate...
International audienceIII-V semiconductor nanowires (NWs) are promising building blocks for photonic...
For a certain heteroepitaxial system, the optical properties of self-assembled nanostructures basica...
Abstract We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111)...
We report continuous-wave lasing from InP/InGaAs nanoridges grown on a patterned (001) Si substrate ...
AbstractSingle InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been ...
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is ...
2 páginas, 2 figuras.-- Trabajo presentado a la XIIth International Conference on Molecular Beam Epi...