Detailed analysis of DC-RF dispersion in AlGaN/GaN HFETs using waveform measurements
- Roff, Chris
- McGovern, Peter
- Benedikt, Johannes
- Tasker, Paul
- Balmer, R.S.
- Wallis, D.J.
- Hilton, K.P.
- Maclean, J.O.
- Hayes, D.G.
- Uren, M.J.
- Martin, T.
Publication date
January 2007
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating condition
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