Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures
We develop several approaches to understand and interpret image contrast in mirror electron microsco...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surf...
Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained f...
Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained f...
A full, three{dimensional (3D) ray tracing approach is developed to simulate the caustics visible i...
Droplet epitaxy is a recently developed variant of molecular beam epitaxy (MBE) which is used to for...
Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resul...
We discuss a new interpretation of mirror electron microscopy (MEM) images, whereby electric field d...
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assem...
GaAs based communication and optoelectronic devices are widely used in our daily lives. Applications...
Conferencia presentada en la VIII International Conference on Surfaces Materials and Vacuum (d...
We develop several approaches to understand and interpret image contrast in mirror electron microsco...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surf...
Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained f...
Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained f...
A full, three{dimensional (3D) ray tracing approach is developed to simulate the caustics visible i...
Droplet epitaxy is a recently developed variant of molecular beam epitaxy (MBE) which is used to for...
Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resul...
We discuss a new interpretation of mirror electron microscopy (MEM) images, whereby electric field d...
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assem...
GaAs based communication and optoelectronic devices are widely used in our daily lives. Applications...
Conferencia presentada en la VIII International Conference on Surfaces Materials and Vacuum (d...
We develop several approaches to understand and interpret image contrast in mirror electron microsco...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surf...