Add to ORKGGrazing incidence X-ray diffraction has been employed to determine directly the distribution of strain in the plane of the interface during deposition of Ge onto Si(001). The corresponding strain distribution has also been deduced for a relaxed island whose atomic structure has been determined by molecular dynamics. The results illustrate the central role of elastic deformation of islands in the initial stage of strain relief. The results are also compared with those for growth with a Sb surfactant layer which suppresses island formation. An investigation of surfactant-like behaviour is also presented for homoepitaxial growth of Ag on Ag(111), where submonolayer coverages of Sb promote a layer-by-layer growth mode over a wide temperature ra...
Rearrangement of two-dimensional Ge and Si islands after coarsening on a laterally strain modulated ...
It is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D...
A set of recent results concerning lateral and vertical ordering of Ge islands grown on Si(001) is r...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...
Grazing-incidence x-ray diffraction has been utilized to give a direct measure of the lateral strain...
The initial strain relaxation of Ge on Si(001) has been investigated during epitaxial growth modifie...
We have investigated by the use of surface x‐ray diffraction the initial strain relaxation of Ge on ...
The influence of Sb as a surfactant on the formation of Si/Ge interface is studied by means of XPD (...
The shape evolution and the effect of deposition temperature on the strain status of Ge/Si(100) isla...
Epitaxial growth can occur layer-by layer or by islanding. The mode of growth depends on the surface...
The shape evolution and the effect of deposition temperature on the strain status of Ge/Si(100) isla...
The present work is dedicated to the experimental investigation of influence of strain, surface reco...
We compare the initial stages of growth of Ge on Si(111) with Bi as a surfactant and without surfact...
Rearrangement of two-dimensional Ge and Si islands after coarsening on a laterally strain modulated ...
It is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D...
A set of recent results concerning lateral and vertical ordering of Ge islands grown on Si(001) is r...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...
Grazing-incidence x-ray diffraction has been utilized to give a direct measure of the lateral strain...
The initial strain relaxation of Ge on Si(001) has been investigated during epitaxial growth modifie...
We have investigated by the use of surface x‐ray diffraction the initial strain relaxation of Ge on ...
The influence of Sb as a surfactant on the formation of Si/Ge interface is studied by means of XPD (...
The shape evolution and the effect of deposition temperature on the strain status of Ge/Si(100) isla...
Epitaxial growth can occur layer-by layer or by islanding. The mode of growth depends on the surface...
The shape evolution and the effect of deposition temperature on the strain status of Ge/Si(100) isla...
The present work is dedicated to the experimental investigation of influence of strain, surface reco...
We compare the initial stages of growth of Ge on Si(111) with Bi as a surfactant and without surfact...
Rearrangement of two-dimensional Ge and Si islands after coarsening on a laterally strain modulated ...
It is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D...
A set of recent results concerning lateral and vertical ordering of Ge islands grown on Si(001) is r...