The importance of harmonic terminations in achieving high-efficiency operation in narrow band (NB) amplifiers has been widely published. In Wide Bandwidth (WB) applications however, the emphasis has been on maintaining a broadband match at the fundamental frequencies with little regard to the harmonic impedances. The problem is further complicated by the fact that the harmonics of the lower frequencies often fall within the operational bandwidth of the amplifier. This paper presents an active load-pull technique for measuring and quantifying the impact of harmonic impedance on device performance, and is achieved through the characterisation of a class A biased 0.3 μm GaAs pHEMT ½W device at 6, 12 and 18 GHz
In this letter, we investigate the influence of the output balun for realization of wideband and eff...
In this letter, we investigate the influence of the output balun for realization of wideband and eff...
In this paper we investigate the complexity of the characterization of electron devices with microwa...
The importance of harmonic terminations in achieving high-efficiency operation in narrow band (NB) a...
The importance of harmonic terminations in achieving high-efficiency operation in narrow band (NB) a...
International audienceOne of the most important requirements that RF and microwave power amplifiers ...
International audienceOne of the most important requirements that RF and microwave power amplifiers ...
International audienceOne of the most important requirements that RF and microwave power amplifiers ...
Abstract –This paper focuses on the characterization and optimization of microwave power transistors...
High-efficiency power-amplifier design requires numerous efforts to investigate both input and outp...
This thesis focuses on the characterization and optimization of microwave power transistors using a ...
High-efficiency power-amplifier design requires numerous efforts to investigate both input and outp...
High-efficiency power-amplifier design requires numerous efforts to investigate both input and outp...
High-efficiency power-amplifier design requires numerous efforts to investigate both input and outp...
In this paper we investigate the complexity of the characterization of electron devices with microwa...
In this letter, we investigate the influence of the output balun for realization of wideband and eff...
In this letter, we investigate the influence of the output balun for realization of wideband and eff...
In this paper we investigate the complexity of the characterization of electron devices with microwa...
The importance of harmonic terminations in achieving high-efficiency operation in narrow band (NB) a...
The importance of harmonic terminations in achieving high-efficiency operation in narrow band (NB) a...
International audienceOne of the most important requirements that RF and microwave power amplifiers ...
International audienceOne of the most important requirements that RF and microwave power amplifiers ...
International audienceOne of the most important requirements that RF and microwave power amplifiers ...
Abstract –This paper focuses on the characterization and optimization of microwave power transistors...
High-efficiency power-amplifier design requires numerous efforts to investigate both input and outp...
This thesis focuses on the characterization and optimization of microwave power transistors using a ...
High-efficiency power-amplifier design requires numerous efforts to investigate both input and outp...
High-efficiency power-amplifier design requires numerous efforts to investigate both input and outp...
High-efficiency power-amplifier design requires numerous efforts to investigate both input and outp...
In this paper we investigate the complexity of the characterization of electron devices with microwa...
In this letter, we investigate the influence of the output balun for realization of wideband and eff...
In this letter, we investigate the influence of the output balun for realization of wideband and eff...
In this paper we investigate the complexity of the characterization of electron devices with microwa...