A combined study, using reflection high energy electron diffraction (RHEED) and reflection anisotropy spectroscopy (RAS), has been carried out on clean (001)InP surfaces prepared in a solid-source molecular beam epitaxy (MBE) reactor. Experiments performed under non-growing (static) conditions show the existence of a number of surface reconstructions, including two distinctive (2 × 4) phases at higher substrate temperatures. As the temperature is decreased (2 × 1), (2 × 2) and c(4 × 4) reconstructions are found. The c(4 × 4) reconstruction, observed for the first time, has a significantly different RA signature than that found for GaAs, indicating that a different surface model is necessary in this case. The RHEED patterns and RA spectra re...
There currently exists a wide range of powerful techniques for probing surfaces, mainly involving th...
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surfac...
Reflection high energy electron diffraction (RHEED) oscillations recorded during molecular beam epit...
A combined study, using reflection high energy electron diffraction (RHEED) and reflection anisotrop...
Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) wer...
Reflection anisotropy (RA) spectroscopy has been used to examine the in vacuo (001) surface of InP b...
Metalorganic vapor phase epitaxy grown InP samples capped with a protective As/P double layer were u...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vap...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
We report on the investigation of In surface segregation in GaInP/GaAs and GaInAs/GaAs heterostructu...
Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical bea...
The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investig...
We have investigated the growth of thin indium layers on As- and Ga-terminated GaAs(001) surfaces by...
Two regimes of growth are observed for epitaxial films of InP prepared by metalorganic molecular bea...
There currently exists a wide range of powerful techniques for probing surfaces, mainly involving th...
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surfac...
Reflection high energy electron diffraction (RHEED) oscillations recorded during molecular beam epit...
A combined study, using reflection high energy electron diffraction (RHEED) and reflection anisotrop...
Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) wer...
Reflection anisotropy (RA) spectroscopy has been used to examine the in vacuo (001) surface of InP b...
Metalorganic vapor phase epitaxy grown InP samples capped with a protective As/P double layer were u...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vap...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
We report on the investigation of In surface segregation in GaInP/GaAs and GaInAs/GaAs heterostructu...
Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical bea...
The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investig...
We have investigated the growth of thin indium layers on As- and Ga-terminated GaAs(001) surfaces by...
Two regimes of growth are observed for epitaxial films of InP prepared by metalorganic molecular bea...
There currently exists a wide range of powerful techniques for probing surfaces, mainly involving th...
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surfac...
Reflection high energy electron diffraction (RHEED) oscillations recorded during molecular beam epit...