This paper proposes a new method for microwave two-port noise parameters values extraction. The method is based on a set of simple and accurate formulas witch allows the noise characterization without any optimization procedure. The measurements were performed using a system based on a short cascaded with a long transmission line and a passive two-port designed to exhibit versus frequency a behavior close to a transistor. The results presented for a measurement example show good agreement with those obtained using an optimization procedure. The new extraction method based on the frequency variation noise measurement principle and used with a simple hardware can be a practical tool for workers in the field
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
New equations for circles of constant noise measure in the source reflection coefficient plane are p...
A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expre...
A new tuner-based method for measuring the four noise-parameters of a two-port is proposed. It makes...
A new tuner-based method for measuring the four noise-parameters of a two-port is proposed. It makes...
A new tuner-based method for measuring the four noise-parameters of a two-port is proposed. It makes...
Noise temperature or noise factor are important parameters for many microwave devices. Their depende...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
The dependence of two-port noise temperature on the source reflection factor does not lend itself to...
Abstract- Factors contributing to microwave noise parameter measure-ment accuracy have been examined...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
New equations for circles of constant noise measure in the source reflection coefficient plane are p...
A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expre...
A new tuner-based method for measuring the four noise-parameters of a two-port is proposed. It makes...
A new tuner-based method for measuring the four noise-parameters of a two-port is proposed. It makes...
A new tuner-based method for measuring the four noise-parameters of a two-port is proposed. It makes...
Noise temperature or noise factor are important parameters for many microwave devices. Their depende...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
The dependence of two-port noise temperature on the source reflection factor does not lend itself to...
Abstract- Factors contributing to microwave noise parameter measure-ment accuracy have been examined...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
New equations for circles of constant noise measure in the source reflection coefficient plane are p...
A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expre...