The spontaneous emission and optical gain spectra from an InGaAs quantum dot laser have been independently measured under the same operating conditions. Using these spectra a combined probability-distribution function describing the electron occupancy in the conduction and valence bands has been experimentally determined. Comparison of this function with theoretical curves based on Fermi-Dirac statistics shows that for temperatures down to 100 K the carrier occupancy statistics are accurately described by thermal distributions. Measurements at 70 K show a breakdown of thermodynamic equilibrium indicated by non-thermal carrier distributions
While thermodynamics is a useful tool to describe the driving of large systems close to equilibrium,...
We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in...
A technique for calculating the temperature of the nonequilibrium electron distribution functions in...
The spontaneous emission and optical gain spectra from an InGaAs quantum dot laser have been indepen...
Using experimental gain and emission measurements as functions of temperature, a method is described...
Self-assembled quantum dot structures used for lasers have shown significant variation in the dot si...
We examine the mechanisms that lead to a low value of saturated modal gain in both 1μm emitting InGa...
We have measured the spontaneous emission rates, absorption, and gain spectra of quantum dots betwee...
The description of quantum dot ensembles using solely average carrier populations is insucient. Book...
The thermal behavior of lasers based on In 0.5Ga 0.5/As/GaAs self-aggregated quantum dots is investi...
Carrier processes in InAs–GaAs self-assembled quantum dot lasers are investigated via the measuremen...
The processes which control the occupation of quantum dot (QD) states have a major influence on the ...
We present a detailed study of the carrier thermodynamics in InAs / InxGa1−xAs self-assembled ...
Using the segmented contact method, we have measured the passive modal absorption, modal gain and sp...
Using a charge coupled device-based thermoreflectance technique, we achieve a high-resolution (∼700 ...
While thermodynamics is a useful tool to describe the driving of large systems close to equilibrium,...
We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in...
A technique for calculating the temperature of the nonequilibrium electron distribution functions in...
The spontaneous emission and optical gain spectra from an InGaAs quantum dot laser have been indepen...
Using experimental gain and emission measurements as functions of temperature, a method is described...
Self-assembled quantum dot structures used for lasers have shown significant variation in the dot si...
We examine the mechanisms that lead to a low value of saturated modal gain in both 1μm emitting InGa...
We have measured the spontaneous emission rates, absorption, and gain spectra of quantum dots betwee...
The description of quantum dot ensembles using solely average carrier populations is insucient. Book...
The thermal behavior of lasers based on In 0.5Ga 0.5/As/GaAs self-aggregated quantum dots is investi...
Carrier processes in InAs–GaAs self-assembled quantum dot lasers are investigated via the measuremen...
The processes which control the occupation of quantum dot (QD) states have a major influence on the ...
We present a detailed study of the carrier thermodynamics in InAs / InxGa1−xAs self-assembled ...
Using the segmented contact method, we have measured the passive modal absorption, modal gain and sp...
Using a charge coupled device-based thermoreflectance technique, we achieve a high-resolution (∼700 ...
While thermodynamics is a useful tool to describe the driving of large systems close to equilibrium,...
We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in...
A technique for calculating the temperature of the nonequilibrium electron distribution functions in...