Pure single-photon emission from an InGaN/GaN quantum dot

Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.This work was supported by JSPS KAKENHI project (No. 19K15039), the KAKENHI Grant-in-Aid for Specially Promoted Research (No. 15H05700), by the TAKUETSU program of the Ministry of Education, Culture, Sports, Science and Technology, Japan, and the UK Engineering and Physical Sciences Research Council Grant (No. EP/M011682/1)