This thesis presents an experimental study of the local environment of p-type and Rare- Earth dopants implanted in ZnO single-crystals (SCs). Various nuclear and bulk property techniques were combined in the following evaluations: Implantation damage annealing was evaluated in ZnO SCs implanted with Fe, Sr and Ca. P-type dopants Cu and Ag implanted ZnO SCs were studied revealing that the solubility of Cu in substituting Zn is considerably higher than that of Ag. These results are discussed within the scope of the ZnO p-type doping problematic with these elements. Experimental proofs of the As “anti-site” behavior in ZnO were for the first time attained, i.e., the majority of As atoms are substitutional at the Zn site (SZn), possibly surroun...
We report on optical and structural analysis of Tm implanted ZnO [0001] single crystals. The samples...
ZnO [0 0 0 1] single-crystals were implanted at room temperature with 150 keVTm+ ions at a fluence o...
Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities...
Tese de doutoramento em Física, apresentada à Universidade de Lisboa através da Faculdade de Ciência...
Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to e...
Zinc oxide single crystals were implanted with Tm and Er ions in a wide range of fluences. For both ...
Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-...
In this work the IIb-VI compound semiconductor ZnO is doped, via ion implantation of stable and radi...
Zinc oxide epilayers grown by metal organic vapour phase epitaxy on (0 0 0 1) sapphire substrates we...
The lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO...
Advancements in ZnO device applications have fostered much interest in the electrical and optical ac...
ZnO is a wide bandgap semiconductor material with numerous present applications, such as varistors a...
In this work we report on the lattice location of implanted Ag in ZnO single-crystals, evaluated by ...
Potentially, group-Ib elements (Cu, Ag, and Au) incorporated on Zn sites can be used for p-type dopi...
The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford...
We report on optical and structural analysis of Tm implanted ZnO [0001] single crystals. The samples...
ZnO [0 0 0 1] single-crystals were implanted at room temperature with 150 keVTm+ ions at a fluence o...
Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities...
Tese de doutoramento em Física, apresentada à Universidade de Lisboa através da Faculdade de Ciência...
Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to e...
Zinc oxide single crystals were implanted with Tm and Er ions in a wide range of fluences. For both ...
Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-...
In this work the IIb-VI compound semiconductor ZnO is doped, via ion implantation of stable and radi...
Zinc oxide epilayers grown by metal organic vapour phase epitaxy on (0 0 0 1) sapphire substrates we...
The lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO...
Advancements in ZnO device applications have fostered much interest in the electrical and optical ac...
ZnO is a wide bandgap semiconductor material with numerous present applications, such as varistors a...
In this work we report on the lattice location of implanted Ag in ZnO single-crystals, evaluated by ...
Potentially, group-Ib elements (Cu, Ag, and Au) incorporated on Zn sites can be used for p-type dopi...
The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford...
We report on optical and structural analysis of Tm implanted ZnO [0001] single crystals. The samples...
ZnO [0 0 0 1] single-crystals were implanted at room temperature with 150 keVTm+ ions at a fluence o...
Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities...