Developing cuprous oxide thin film characterization techniques to illuminate efficiency-limiting mechanisms in photovoltaic applications

Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2011.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Cataloged from student submitted PDF version of thesis.Includes bibliographical references (p. 58-60).Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy, with its extraordinary resource base, is one of the most feasible long-term options for satisfying energy demand with minimal environmental impact. However, solar photovoltaic panels remain expensive and employ materials whose resource bases cannot satisfy global, terawatt-level penetration. This necessitates the development of cheap, earth-abundant semiconductors for solar conversion such as cuprous oxide (Cu₂O). Poor solar energy conversion efficiency (10 nanoseconds, minority carrier diffusion length could easily exceed the film thickness. The photoelectrochemical minority carrier diffusion length measurement achieves success on gallium arsenide test samples, determining flat-band potential, quantum efficiency, and minority carrier diffusion length, paving the way for future Cu₂O measurement. Future work may apply this test procedure to fully characterize other materials, and eventually lead to solar cell fabrication.by Riley Eric Brandt.S.B