Recently we have shown that the reduction in the photoluminescence linewidth of many deep luminescence centers in highly enriched Si-28 results in well-resolved isotopic fingerprints. This allows for a better characterization of a defect center, as not only the involvement of a specific element but also the number of atoms of that element within the complex can be determined. Surprisingly, we have found that many well-known luminescence centers have a different composition than originally supposed. In addition, we have found a large number of four- and five-atom luminescence centers involving the elements Cu, Au, and Li. Here we introduce series of four- and five-atom deep luminescence centers involving a single Pt atom together with Cu and...
Silicon-based quantum information processing devices show great promise, being one of the most advan...
While many defects in silicon provide long-lived spin qubits, it remains difficult to use them as th...
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich...
We have recently shown that the dramatic reduction in linewidth of many deep luminescence centers in...
The fundamental properties of deep luminescence centres in Si associated with transition metals such...
Recent studies have demonstrated remarkable improvements in the spectroscopy of shallow impurities b...
The implantation of radioactive isotopes into semiconductor materials is a powerful technique that e...
We report the first high resolution photoluminescence studies of isotopically pure silicon. New inf...
Photoluminescence measurements of three cadmium related defects are presented in this thesis Group I...
Persistent luminescence (PersL) is an optical phenomenon found in inorganic materials, where a lumin...
Integrated silicon photonics allows for the routine control and detection of light down to the singl...
The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical p...
This review paper is devoted mainly to a short description of two kinds of point defects in crystals...
Photoluminescence band at 780 meV; previously assigned to silver-related centers in Si on basis of i...
SIGLEAvailable from British Library Document Supply Centre- DSC:D65851/86 / BLDSC - British Library ...
Silicon-based quantum information processing devices show great promise, being one of the most advan...
While many defects in silicon provide long-lived spin qubits, it remains difficult to use them as th...
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich...
We have recently shown that the dramatic reduction in linewidth of many deep luminescence centers in...
The fundamental properties of deep luminescence centres in Si associated with transition metals such...
Recent studies have demonstrated remarkable improvements in the spectroscopy of shallow impurities b...
The implantation of radioactive isotopes into semiconductor materials is a powerful technique that e...
We report the first high resolution photoluminescence studies of isotopically pure silicon. New inf...
Photoluminescence measurements of three cadmium related defects are presented in this thesis Group I...
Persistent luminescence (PersL) is an optical phenomenon found in inorganic materials, where a lumin...
Integrated silicon photonics allows for the routine control and detection of light down to the singl...
The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical p...
This review paper is devoted mainly to a short description of two kinds of point defects in crystals...
Photoluminescence band at 780 meV; previously assigned to silver-related centers in Si on basis of i...
SIGLEAvailable from British Library Document Supply Centre- DSC:D65851/86 / BLDSC - British Library ...
Silicon-based quantum information processing devices show great promise, being one of the most advan...
While many defects in silicon provide long-lived spin qubits, it remains difficult to use them as th...
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich...