Operation and Optimization of Silicon-Diode-Based Optical Modulators

An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device ideal for comparing the two modes of operation. In reverse bias, the device has a VπL [V subscript pi L] of 4.0 V·cm and a bandwidth of 26 GHz. In forward bias, the device is very sensitive, a VπL [V subscript pi L] as low as 0.0025 V·cm has been achieved, but the bandwidth is only 100 MHz. A new geometry for a reverse-bias device is proposed, and it is predicted to achieve a VπL [V subscript pi L] of 0.5 V·cm.United States. Defense Advanced Research Projects Agency. Electronic and Photonic Integrated Circuit (EPIC) Program (Air Force Contract FA8721-05-C-0002) (Contract W911NF-04-1-0431)National Science Foundation (U.S.)Ida M. Green Fellowshi