A theoretical model describing the relaxation of charge carriers in semiconductors of high resistance under the influence of the laser pulses is presented. It is demonstrated that parameters of the trapping states relevant to the processes of the conductivity relaxation can be defined by fitting the experimental data. Time evolution of the conductivity of the GaAs bulk semiconductor under the influence of nanosecond and picosecond laser pulses is considered. Effect of two laser pulses, when the first one results in population of the trapping state and the second one induces its depopulation, is also considered. First Published Online: 14 Oct 201
We apply computer modelling to the multiple-trapping rate equations governing the time-evolution of ...
International audienceElectronic excitation-relaxation processes induced by ultra-short laser pulses...
International audiencethe behaviour of semiconductor materials and devices subjected to femtosecond ...
A theoretical model describing the relaxation of charge carriers in semiconductors of high resistanc...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
We continue the study of transient behavior of Excitons. This presentation follows the previous one ...
In this paper we generalized recently introduced approach for estimation of time scales of mass tran...
In this paper we generalized recently introduced approach for estimation of time scales of mass tran...
Large increases in conductivity induced in GaAs and other semiconductors by photoionization allow fa...
The paper reports on thermally stimulated conductivity studies used for characterization of the dens...
We apply computer modelling to the multiple-trapping rate equations governing the time-evolution of ...
We apply computer modelling to the multiple-trapping rate equations governing the time-evolution of ...
International audienceElectronic excitation-relaxation processes induced by ultra-short laser pulses...
International audiencethe behaviour of semiconductor materials and devices subjected to femtosecond ...
A theoretical model describing the relaxation of charge carriers in semiconductors of high resistanc...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
We continue the study of transient behavior of Excitons. This presentation follows the previous one ...
In this paper we generalized recently introduced approach for estimation of time scales of mass tran...
In this paper we generalized recently introduced approach for estimation of time scales of mass tran...
Large increases in conductivity induced in GaAs and other semiconductors by photoionization allow fa...
The paper reports on thermally stimulated conductivity studies used for characterization of the dens...
We apply computer modelling to the multiple-trapping rate equations governing the time-evolution of ...
We apply computer modelling to the multiple-trapping rate equations governing the time-evolution of ...
International audienceElectronic excitation-relaxation processes induced by ultra-short laser pulses...
International audiencethe behaviour of semiconductor materials and devices subjected to femtosecond ...