Latches based on the Dual Interlocked storage Cell or DICE are very tolerant to Single Event Upsets (SEU). However, for highly scaled processes where the sizes continue to decrease, the data in this latch can be corrupted by an SEU due to charge sharing between adjacent nodes. Some layout considerations are used to improve the tolerance of the DICE latches to SEU and especially the influence of sensitive nodes separation is tested for DICE latches designed with a 130 nm process
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single ev...
This invention is comprised of a logical memory latch and cell, using logic and circuit modification...
The last few years have seen the development and fabrication of nanoscale circuits at high density a...
International audienceDual-Interlocked-Cell (DICE) latches are tolerant to SingleEvent Effects (SEE)...
Three layout-hardened Dual Interlocked Storage Cell (DICE) D Flip-Flops (DFFs) were designed and man...
Upset hardened dual-interlocked cell (DICE) [1] has found an important place in circuits for space a...
The FE-I4 chip for the B-layer upgrade is designed in a 130 nm CMOS process. For this design, config...
When exposed to an harsh environment in space, high atmosphere or even on earth, Integrated Circuits...
Abstract: A single event upset (SEU) tolerant latchwith a triple-interlocked structure is presented....
Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed...
International audienceFirst, this paper proposes a double-node-upset (DNU)-completely-tolerant (DNUC...
International audienceThe single event upset (SEU) tolerance of various latch designs in 0.13um CMOS...
International audienceThe FE-I4 chip for the B-layer upgrade is designed in a 130 nm CMOS process. F...
A single event causing a double-node upset is likely to occur in nanometric complementary metal-oxid...
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single ev...
This invention is comprised of a logical memory latch and cell, using logic and circuit modification...
The last few years have seen the development and fabrication of nanoscale circuits at high density a...
International audienceDual-Interlocked-Cell (DICE) latches are tolerant to SingleEvent Effects (SEE)...
Three layout-hardened Dual Interlocked Storage Cell (DICE) D Flip-Flops (DFFs) were designed and man...
Upset hardened dual-interlocked cell (DICE) [1] has found an important place in circuits for space a...
The FE-I4 chip for the B-layer upgrade is designed in a 130 nm CMOS process. For this design, config...
When exposed to an harsh environment in space, high atmosphere or even on earth, Integrated Circuits...
Abstract: A single event upset (SEU) tolerant latchwith a triple-interlocked structure is presented....
Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed...
International audienceFirst, this paper proposes a double-node-upset (DNU)-completely-tolerant (DNUC...
International audienceThe single event upset (SEU) tolerance of various latch designs in 0.13um CMOS...
International audienceThe FE-I4 chip for the B-layer upgrade is designed in a 130 nm CMOS process. F...
A single event causing a double-node upset is likely to occur in nanometric complementary metal-oxid...
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single ev...
This invention is comprised of a logical memory latch and cell, using logic and circuit modification...
The last few years have seen the development and fabrication of nanoscale circuits at high density a...