The presented work describes the design and characterization results of different electronic building blocks for a MGy gamma radiation tolerant optoelectronic transceiver aiming at ITER applications. The circuits are implemented using the 70GHz fT SiGe HBT in a 0.35μm BiCMOS technology. A VCSEL driver circuit has been designed and measured up to a TID of 1.6 MGy and up to a bit rate of 622Mbps. No significant degradation is seen in the eye opening of the output signal. On the receiver side, both a 1GHz, 3kΩ transimpedance and a 5GHz Cherry-Hooper amplifier with over 20dB voltage gain have been designed
During future ITER maintenance operations, sensors and their embarked electronics will be exposed to...
Optoelectronic very-large scale integrated (OE-VLSI) technology provides for the integration of phot...
The objective of this research is to optimize silicon-germanium (SiGe) heterojunction bipolar transi...
In this paper, we design and test a radiation-tolerant opto-electronic transmitter based on vertical...
This paper describes the radiation qualification procedure for a 1 MGy-tolerant Application Specific...
We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-s...
For the potential use in future high luminosity applications in high energy physics (HEP) (e.g. the ...
Silicon Germanium (Si1-xGex) is considered the choice for analog/mixed-signal RF and optoelectronic ...
This paper describes the radiation qualification procedure for a 1 MGy-tolerant Application Specific...
Third generation 200GHz silicon–germanium Heterojunction Bipolar Transistors (Si–Ge HBTs) were irrad...
We report the design of 112 Gb/s radiation-hard (RH) optical transceiver applicable to intra-satelli...
This paper is devoted to studying the effects of g radiation on the electrical parameters of complem...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
AbstractThis work describes the optical and electrical characterization of an integrated optoelectro...
Silicon photonics enables the manufacturing of high-speed, low-power, integrated optical circuits wi...
During future ITER maintenance operations, sensors and their embarked electronics will be exposed to...
Optoelectronic very-large scale integrated (OE-VLSI) technology provides for the integration of phot...
The objective of this research is to optimize silicon-germanium (SiGe) heterojunction bipolar transi...
In this paper, we design and test a radiation-tolerant opto-electronic transmitter based on vertical...
This paper describes the radiation qualification procedure for a 1 MGy-tolerant Application Specific...
We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-s...
For the potential use in future high luminosity applications in high energy physics (HEP) (e.g. the ...
Silicon Germanium (Si1-xGex) is considered the choice for analog/mixed-signal RF and optoelectronic ...
This paper describes the radiation qualification procedure for a 1 MGy-tolerant Application Specific...
Third generation 200GHz silicon–germanium Heterojunction Bipolar Transistors (Si–Ge HBTs) were irrad...
We report the design of 112 Gb/s radiation-hard (RH) optical transceiver applicable to intra-satelli...
This paper is devoted to studying the effects of g radiation on the electrical parameters of complem...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
AbstractThis work describes the optical and electrical characterization of an integrated optoelectro...
Silicon photonics enables the manufacturing of high-speed, low-power, integrated optical circuits wi...
During future ITER maintenance operations, sensors and their embarked electronics will be exposed to...
Optoelectronic very-large scale integrated (OE-VLSI) technology provides for the integration of phot...
The objective of this research is to optimize silicon-germanium (SiGe) heterojunction bipolar transi...