Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment
- Li, Z
- Abreu, M
- Anbinderis, P
- Anbinderis, T
- D’Ambrosio, N
- de Boer, Wim
- Borchi, E
- Borer, K
- Bruzzi, M
- Buontempo, S
- Chen, W
- Cindro, V
- Dierlamm, A
- Eremin, V
- Gaubas, E
- Gorbatenko, V
- Grigoriev, E
- Hauler, F
- Heijne, Erik H M
- Heising, S
- Hempel, O
- Herzog, R
- Härkönen, J
- Ilyashenko, I
- Janos, S
- Jungermann, L
- Kalesinskas, V
- Kapturauskas, J
- Laiho, R
- Luukka, P
- Mandic, I
- De Masi, R
- Menichelli, D
- Mikuz, M
- Militaru, O
- Niinikosky, T O
- O’Shea, V
- Pagano, S
- Paul, S
- Piotrzkowski, K
- Pretzl, K
- Rato-Mendes, P
- Rouby, X
- Ruggiero, G
- Smith, K
- Sonderegger, P
- Sousa, P
- Tuominen, E
- Tuovinen, E
- Verbitskaya, E
- Vaitkus, J
- Wobst, E
- Zavrtanik, M
DOIAbstract
There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field ...
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