Add to ORKGThe software to simulate radiation resistance of MOSFET transistors, the basic elements of CMOS integrated circuits, is presented. The software performs visualization and analysis of volt-ampere characteristics of p - and n -channel transistors, extraction of «radiation sensitive» SPICE parameters and modeling of their variations with an ionizing radiation. The degradation of MOSFET transistors of the 1554LN1 microcircuit is investigated for gamma Co60 irradiation
Abstract—With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an i...
With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased ...
Nowadays integrated circuit reliability is challenged by both variability and working conditions. En...
In this paper we describe a simulator which can be used to study the effects on circuit behavior of ...
In this paper we describe a simulator which can be used to study the effects on circuit behavior of ...
Many high performance amplifiers use power MOSFETs in their output stages, especially in operational...
This thesis work presents the numerical device analysis of ionizing radiation induced single-event ...
This paper presents a study of the ionizing radiation tolerance of analog parameters of 0.18-um CMOS...
There is a need to understand and combat potential radiation damage problems in semiconductor device...
This paper proposes a methodology to design radiation-hardened ICs, suitable for space applications ...
Total ionizing dose (TID) radiation effects modeling and simulation on digital, analog and mixed sig...
Introduction. Electromagnetic or ionizing radiation (IO) has great influence for radiation resistanc...
Radiation hardness is a major concern for electronics in high luminosity colliders for high energy p...
This paper discusses the total dose radiation characteristics of 1.0??m SIMOX MOSFETs, CMOS/SIMOX in...
A practical guide to the effects of radiation on semiconductor components of electronic systems, and...
Abstract—With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an i...
With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased ...
Nowadays integrated circuit reliability is challenged by both variability and working conditions. En...
In this paper we describe a simulator which can be used to study the effects on circuit behavior of ...
In this paper we describe a simulator which can be used to study the effects on circuit behavior of ...
Many high performance amplifiers use power MOSFETs in their output stages, especially in operational...
This thesis work presents the numerical device analysis of ionizing radiation induced single-event ...
This paper presents a study of the ionizing radiation tolerance of analog parameters of 0.18-um CMOS...
There is a need to understand and combat potential radiation damage problems in semiconductor device...
This paper proposes a methodology to design radiation-hardened ICs, suitable for space applications ...
Total ionizing dose (TID) radiation effects modeling and simulation on digital, analog and mixed sig...
Introduction. Electromagnetic or ionizing radiation (IO) has great influence for radiation resistanc...
Radiation hardness is a major concern for electronics in high luminosity colliders for high energy p...
This paper discusses the total dose radiation characteristics of 1.0??m SIMOX MOSFETs, CMOS/SIMOX in...
A practical guide to the effects of radiation on semiconductor components of electronic systems, and...
Abstract—With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an i...
With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased ...
Nowadays integrated circuit reliability is challenged by both variability and working conditions. En...