The analytical description of the volume reflection of the charged ultrarelativistic particles in bent single crystals is considered. The relation describing the angle of volume reflection as a function of the transversal energy is obtained. The different angle distributions of the scattered protons in the single crystals are found. Results of calculations for 400 GeV protons scattered by the silicon single crystal are presented
The trend of volume reflection parameters (deflection angle and efficiency) in a bent (110) silicon ...
The interactions of 400 GeV protons with different sequences of bent silicon crystals have been inve...
The interactions of 400 GeV protons with different sequences of bent silicon crystals have been inve...
An analytical description of volume reflection of charged ultrarelativistic particles in bent single...
The paper is devoted to the study of volume reflection and volume capture of high energy particles m...
The paper is devoted to the investigation of volume reflection and channeling processes of ultrarela...
The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with b...
The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with b...
We report the observation of the so-called volume reflection effect with 400 GeV/c protons interacti...
Multiple volume reflection by different planes in a bent silicon crystal with its axis orientation ...
The trend of volume reflection parameters (deflection angle and efficiency) in a bent (110) silicon ...
The interactions of 400 GeV protons with different sequences of bent silicon crystals have been inve...
The interactions of 400 GeV protons with different sequences of bent silicon crystals have been inve...
An analytical description of volume reflection of charged ultrarelativistic particles in bent single...
The paper is devoted to the study of volume reflection and volume capture of high energy particles m...
The paper is devoted to the investigation of volume reflection and channeling processes of ultrarela...
The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with b...
The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with b...
We report the observation of the so-called volume reflection effect with 400 GeV/c protons interacti...
Multiple volume reflection by different planes in a bent silicon crystal with its axis orientation ...
The trend of volume reflection parameters (deflection angle and efficiency) in a bent (110) silicon ...
The interactions of 400 GeV protons with different sequences of bent silicon crystals have been inve...
The interactions of 400 GeV protons with different sequences of bent silicon crystals have been inve...