Add to ORKGThe features of formation passivation coverings of cadmium telluride on epitaxial layers CdхНg1-хТе used for manufacturing of matrix photodetectors of the IR-range are investigated. The laws of process of passivation coverings creation by a method of «the hot wall » are established at unitary and repeated use of CdTe source
The production process of the non-alloyed epitaxial indium antimonide layers for creation of the mul...
The absorption coefficient of CdTe is large enough to assure that all of the visible light is absorb...
N and P-type semi-insulating cadmium telluride crystals have been scanned with a 6 328 A laser beam ...
The theoretical considerations and practical aspects of passivating insulator films, in the context...
The influence of growth surface defects of CdхHg1-хTe epitaxial layers which has been grown by liqui...
The paper is concerned with the zone-variable epitaxial structures of composition Cd_xHg_1_-_xTe/CdT...
The object of investigation: the epitaxial layers of the cadmium telluride. The purpose of the work:...
In spite of the fact that solid solution CdxHg1-xTe is the most sensitive and effective semiconducto...
The selective CdTe Nanohetero-Epitaxy growth on Si(100) substrates has been achieved without the use...
The aim is to study the deposition process of the CdTe, HgTe and Cd*00xHg*001*00-*00xTe layers from ...
The aim is to develop the low-temperature method for creating epitaxial films of the cadmium-mercury...
The growth of CdTe oriented thin films by the ENSH method - i.e. Epitaxial Nucleation in Sub-microsc...
The health risks associated with the inhalation or ingestion of cadmium are well documented([1,2]). ...
The paper presents the methods of obtaining photovoltaic structures based on CdXHg1-XTe graded-band-...
Two methods have been investigated for incorporating excess cadmium into CdTe electrodeposited from ...
The production process of the non-alloyed epitaxial indium antimonide layers for creation of the mul...
The absorption coefficient of CdTe is large enough to assure that all of the visible light is absorb...
N and P-type semi-insulating cadmium telluride crystals have been scanned with a 6 328 A laser beam ...
The theoretical considerations and practical aspects of passivating insulator films, in the context...
The influence of growth surface defects of CdхHg1-хTe epitaxial layers which has been grown by liqui...
The paper is concerned with the zone-variable epitaxial structures of composition Cd_xHg_1_-_xTe/CdT...
The object of investigation: the epitaxial layers of the cadmium telluride. The purpose of the work:...
In spite of the fact that solid solution CdxHg1-xTe is the most sensitive and effective semiconducto...
The selective CdTe Nanohetero-Epitaxy growth on Si(100) substrates has been achieved without the use...
The aim is to study the deposition process of the CdTe, HgTe and Cd*00xHg*001*00-*00xTe layers from ...
The aim is to develop the low-temperature method for creating epitaxial films of the cadmium-mercury...
The growth of CdTe oriented thin films by the ENSH method - i.e. Epitaxial Nucleation in Sub-microsc...
The health risks associated with the inhalation or ingestion of cadmium are well documented([1,2]). ...
The paper presents the methods of obtaining photovoltaic structures based on CdXHg1-XTe graded-band-...
Two methods have been investigated for incorporating excess cadmium into CdTe electrodeposited from ...
The production process of the non-alloyed epitaxial indium antimonide layers for creation of the mul...
The absorption coefficient of CdTe is large enough to assure that all of the visible light is absorb...
N and P-type semi-insulating cadmium telluride crystals have been scanned with a 6 328 A laser beam ...