Add to ORKGThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.Includes bibliographical references (p. 93-97).by Emily L. Warlick.M.Eng
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 19...
We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecul...
The ZnSe bandgap of 2.67 eV as compared to (Al,Ga)As having a 2.0 eV bandgap for an Al mole fraction...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1997.Includes bibliographi...
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrat...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The application of mismatched heteroepitaxial semiconductors has been quite limited due to the prese...
The application of mismatched heteroepitaxial semiconductors has been quite limited due to the prese...
The application of mismatched heteroepitaxial semiconductors has been quite limited due to the prese...
This thesis describes the growth and characterisation of ZnSe-based II-semiconductors by Molecular B...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 19...
We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecul...
The ZnSe bandgap of 2.67 eV as compared to (Al,Ga)As having a 2.0 eV bandgap for an Al mole fraction...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1997.Includes bibliographi...
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrat...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The application of mismatched heteroepitaxial semiconductors has been quite limited due to the prese...
The application of mismatched heteroepitaxial semiconductors has been quite limited due to the prese...
The application of mismatched heteroepitaxial semiconductors has been quite limited due to the prese...
This thesis describes the growth and characterisation of ZnSe-based II-semiconductors by Molecular B...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 19...
We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecul...
The ZnSe bandgap of 2.67 eV as compared to (Al,Ga)As having a 2.0 eV bandgap for an Al mole fraction...