Add to ORKGThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.Includes bibliographical references (leaves 154-168).by Easen Ho.Ph.D
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vap...
High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vap...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 19...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 1995.Includes bibliograp...
This work briefly reviews the state of the art of p-type doping metalorganic vapor phase epitaxy (MO...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The main purpose of the work described in this thesis was to develop techniques for producing boules...
ZnSe was grown using the gaseous source epitaxial methods of metalorganic molecular beam epitaxy (MO...
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vap...
High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vap...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 19...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 1995.Includes bibliograp...
This work briefly reviews the state of the art of p-type doping metalorganic vapor phase epitaxy (MO...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The main purpose of the work described in this thesis was to develop techniques for producing boules...
ZnSe was grown using the gaseous source epitaxial methods of metalorganic molecular beam epitaxy (MO...
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vap...
High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vap...