Chemical trends of deep levels in van der Waals semiconductors
- Penghong Ci
- Xuezeng Tian
- Jun Kang
- Anthony Salazar
- Kazutaka Eriguchi
- Sarah Warkander
- Kechao Tang
- Jiaman Liu
- Yabin Chen
- Sefaattin Tongay
- Wladek Walukiewicz
- Jianwei Miao
- Oscar Dubon
- Junqiao Wu
Publication date
October 2020
DOI Publisher
Springer Science and Business Media LLC Journal
Nature CommunicationsAbstract
The optical and electronic properties of semiconducting transition metal dichalcogenides are strongly dependent on native defects within their crystal lattice. Here, the authors use transient spectroscopy to identify defect-related deep levels in the bandgap of MoS2, WS2 and their alloys
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