Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.Includes bibliographical references (p. 161-174).For a long time, there has been a desire to extend the emission wavelength of GaAs-based quantum well lasers, with the aim of eventually replacing InP with GaAs as the substrate of choice for communication applications. Using dilute nitride GaInAsN QWs or InAs quantum dots, emission wavelengths have successfully been extended to 1.3 m, but significant difficulties have been met going beyond 1.3 m. In this thesis, we present an alternative approach, namely, the molecular beam epitaxy (MBE) growth of quantum wells on top of indium gallium arsenic compositionally graded buffers, wit...
Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well...
GaSb/GaAs quantum dots (QD) were grown by atmospheric pressure (AP) metal-organic vapour phase epita...
GaSb/GaAs quantum dots (QD) were grown by atmospheric pressure (AP) metal-organic vapour phase epita...
Quantum well (QW) intermixing was carried out by post-growth rapid thermal annealing in InGaAsN/GaAs...
III-V semiconductor quantum wells (QW) were grown by atmospheric pressure organometallic chemical va...
GaAs/In0.07Al0.93As tensile-strained quantum wells were grown on [001] GaAs substrates using molecul...
Ga1−x Inx As1−y Py /InP (x=0.72, y=0.39) lattice‐matched quantum wells (QWs) are grown by low‐pressu...
A strained single quantum well of GaAs/InxGa1-xGa/GaAs (x=0.23) has been grown by low pressure MOVPE...
This letter reports the successful molecular beam epitaxial growth of high‐quality InxGa1−xAs/InxAl1...
Photoluminescence (PL) measurements are presented for thin epitaxial layers of InAs, 2.5 Å<d <36 Å, ...
Photoluminescence (PL) studies have been carried out on 120 Å InGaAs/InAlAs single quantum well stru...
The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structure...
Type II InSb/InAs quantum dots (QDs) emitting in the 3-4 µm range are promising candidate as the gai...
International audience(InAs) n /(GaAs) m n1.5-2, m0.25 monolayer fractional monolayer superlattices ...
This thesis reports the optical properties of InAlAs QDs and InGaAsN QWs grown by Molecular Beam Epi...
Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well...
GaSb/GaAs quantum dots (QD) were grown by atmospheric pressure (AP) metal-organic vapour phase epita...
GaSb/GaAs quantum dots (QD) were grown by atmospheric pressure (AP) metal-organic vapour phase epita...
Quantum well (QW) intermixing was carried out by post-growth rapid thermal annealing in InGaAsN/GaAs...
III-V semiconductor quantum wells (QW) were grown by atmospheric pressure organometallic chemical va...
GaAs/In0.07Al0.93As tensile-strained quantum wells were grown on [001] GaAs substrates using molecul...
Ga1−x Inx As1−y Py /InP (x=0.72, y=0.39) lattice‐matched quantum wells (QWs) are grown by low‐pressu...
A strained single quantum well of GaAs/InxGa1-xGa/GaAs (x=0.23) has been grown by low pressure MOVPE...
This letter reports the successful molecular beam epitaxial growth of high‐quality InxGa1−xAs/InxAl1...
Photoluminescence (PL) measurements are presented for thin epitaxial layers of InAs, 2.5 Å<d <36 Å, ...
Photoluminescence (PL) studies have been carried out on 120 Å InGaAs/InAlAs single quantum well stru...
The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structure...
Type II InSb/InAs quantum dots (QDs) emitting in the 3-4 µm range are promising candidate as the gai...
International audience(InAs) n /(GaAs) m n1.5-2, m0.25 monolayer fractional monolayer superlattices ...
This thesis reports the optical properties of InAlAs QDs and InGaAsN QWs grown by Molecular Beam Epi...
Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well...
GaSb/GaAs quantum dots (QD) were grown by atmospheric pressure (AP) metal-organic vapour phase epita...
GaSb/GaAs quantum dots (QD) were grown by atmospheric pressure (AP) metal-organic vapour phase epita...