Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically deformed. Our experimental and modeling results indicate that the effective contact area is directly proportional to the applied load. Furthermore, for first time, results have been obtained that indicate that the dicing yield is proportional to the measured bond strength, and the bond strength is proportional to the effective contact area. It is also shown that films with rougher surfaces (and corresponding lower effective bonding areas) have lower bond strengths and dicing yields. A quantitative model for the relationship between measured surface rou...
Copper (Cu) is used as an interconnect material in many applications owing to its high thermal, elec...
Metal-based bonding will create vertical electrical connections between the dies and simultaneously...
Silicon wafer fabrication facilities are developing copper metallized wafers. Advantages of copper c...
Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was u...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The effects of the surface roughness and applied loads on the specific electrical contact resistance...
Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing int...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 20...
One of the primary and critical requirements for high quality wafer level thermocompression Copper-C...
In the current two-dimensional (2D) integrated circuits, the chip size is increasing despite the red...
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device...
An analytical model is proposed which relates the bonding temperature, pressure and duration with th...
The increasing demand for system performance enhancement and more functionality has led to the explo...
Electroplated copper (Cu) films are often annealed during back-end processes to stabilize grain grow...
Cu-to-Cu direct bonding has been regarded as an important approach to achieve three-dimensional inte...
Copper (Cu) is used as an interconnect material in many applications owing to its high thermal, elec...
Metal-based bonding will create vertical electrical connections between the dies and simultaneously...
Silicon wafer fabrication facilities are developing copper metallized wafers. Advantages of copper c...
Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was u...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The effects of the surface roughness and applied loads on the specific electrical contact resistance...
Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing int...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 20...
One of the primary and critical requirements for high quality wafer level thermocompression Copper-C...
In the current two-dimensional (2D) integrated circuits, the chip size is increasing despite the red...
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device...
An analytical model is proposed which relates the bonding temperature, pressure and duration with th...
The increasing demand for system performance enhancement and more functionality has led to the explo...
Electroplated copper (Cu) films are often annealed during back-end processes to stabilize grain grow...
Cu-to-Cu direct bonding has been regarded as an important approach to achieve three-dimensional inte...
Copper (Cu) is used as an interconnect material in many applications owing to its high thermal, elec...
Metal-based bonding will create vertical electrical connections between the dies and simultaneously...
Silicon wafer fabrication facilities are developing copper metallized wafers. Advantages of copper c...