Add to ORKGThesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.Includes bibliographical references (p. 133-140).by Mark Albert Armstrong.Ph.D
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
The first book to deal with a broad spectrum of process and device design, and modelling issues rela...
Rights Copyright © is held by the author. Digital access to this material is made possible by the Un...
Les transistors bipolaires à hétérojonctions (TBH) Si/SiGe:C disponibles aujourd'hui dans les techno...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
A review is given of the 300 K electron and hole mobilities in Si/SiGe heterostructures in the light...
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field eff...
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium h...
A review is given of the 300 K electron and hole mobilities in Si/SeGe heterostructures and the pote...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field eff...
The advances in the growth of pseudomorphic silicon-germanium epitaxial layer combined with the stro...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
The first book to deal with a broad spectrum of process and device design, and modelling issues rela...
Rights Copyright © is held by the author. Digital access to this material is made possible by the Un...
Les transistors bipolaires à hétérojonctions (TBH) Si/SiGe:C disponibles aujourd'hui dans les techno...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
A review is given of the 300 K electron and hole mobilities in Si/SiGe heterostructures in the light...
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field eff...
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium h...
A review is given of the 300 K electron and hole mobilities in Si/SeGe heterostructures and the pote...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field eff...
The advances in the growth of pseudomorphic silicon-germanium epitaxial layer combined with the stro...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1...