Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
- Da Vià, C
- Bell, W.H.
- Berglund, P.
- Borchi, E.
- Borer, K.
- Bruzzi, Mara
- Buontempo, S.
- Casagrande, L.
- Chapuy, S.
- Cindro, V
- Dimcovski, Zlatomir
- D'Ambrosio, N
- de Boer, Wim
- Dezillie, B.
- Esposito, A.
- Granata, V.
- Grigoriev, E.
- Heijne, E.
- Heising, S.
- Janos, S.
- Koivuniemi, J.
- Konorov, I.
- Li, Z.
- Lourenço, C.
- Mikuz, M.
- Niinikoski, T.
- Pagano, S.
- Palmieri, V.
- Paul, S.
- Pirollo, S.
- Pretzl, K.
- Ropotar, I.
- Ruggiero, G
- Salmi, J.
- Seppä, H.
- Suni, I.
- Smith, K.
- Sonderegger, P.
- Valtonen, M.
- Zavrtanik, M.
DOIAbstract
The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to $2 \times 10^{15} \rm{n/cm}^2$, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55% and 65% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity cont...
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