Add to ORKGThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1991.Includes bibliographical references (leaves 179-187).by Kathleen Regina Early.Ph.D
By using the near field in proximity x-ray lithography (PXL), a technique is demonstrated that exten...
Along with the introduction of the 32 nm technology node in the next years, the methods for correcti...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Includes bibliographical references (p. 155-163).Research supported by Joint Services Electronics Pr...
Image resolution in x-ray proximity printing is influenced by diffraction, photo and Auger electron ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The possibility and usefulness of proximity correction in 100-nm-regime X-ray lithography was examin...
The optimal conditions to print the 0.13 mu m line and space are presented for newly constructed x-r...
Resolution in x-ray lithography is influenced mainly by the exposure geometry, the resist's behavior...
Image intensity profile and resist profile calculations using the X-ray modeling and simulation prog...
Image intensity profiles and resist profile calculations using the XMAS simulation program are prese...
It is time to revisit X-ray. By enhancing, in the Near Field, Proximity X-ray Lithography (PXL), the...
Proceedings of SPIE - The International Society for Optical Engineering3997721-728PSIS
Photolithography is one of the earliest technologies used to transfer patterns to a substrate. It is...
The electron energy of, e.g., 50 keV has advantages over less electron energy for X-ray mask substra...
By using the near field in proximity x-ray lithography (PXL), a technique is demonstrated that exten...
Along with the introduction of the 32 nm technology node in the next years, the methods for correcti...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Includes bibliographical references (p. 155-163).Research supported by Joint Services Electronics Pr...
Image resolution in x-ray proximity printing is influenced by diffraction, photo and Auger electron ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The possibility and usefulness of proximity correction in 100-nm-regime X-ray lithography was examin...
The optimal conditions to print the 0.13 mu m line and space are presented for newly constructed x-r...
Resolution in x-ray lithography is influenced mainly by the exposure geometry, the resist's behavior...
Image intensity profile and resist profile calculations using the X-ray modeling and simulation prog...
Image intensity profiles and resist profile calculations using the XMAS simulation program are prese...
It is time to revisit X-ray. By enhancing, in the Near Field, Proximity X-ray Lithography (PXL), the...
Proceedings of SPIE - The International Society for Optical Engineering3997721-728PSIS
Photolithography is one of the earliest technologies used to transfer patterns to a substrate. It is...
The electron energy of, e.g., 50 keV has advantages over less electron energy for X-ray mask substra...
By using the near field in proximity x-ray lithography (PXL), a technique is demonstrated that exten...
Along with the introduction of the 32 nm technology node in the next years, the methods for correcti...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...