Add to ORKGThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1990.Includes bibliographical references (leaves 210-222).by Jaeshin Cho.Ph.D
A brief review is given of models which propose a correlation between electromigration resistance an...
The range of microstructural effects on thin film and interconnect properties is briefly described, ...
This paper describes fine-grained Mg containing A1-Si alloys, which have an electromigration resista...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The reliability of microelectronic systems is often limited by electromigration failure in Al-based ...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
Electromigration is one of the most important reliability issues in microelectronics. Material trans...
In this dissertation, the effects of temperature and interconnect properties on copper metallization...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Under similar test conditions, the electromigration reliability of Al and Cu metallization interconn...
170 p.With changing materials systems and interconnect architectures from Al based metallization to ...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Electrical measurements of test structures of Al-0.5%Cu interconnects were performed as a function o...
A brief review is given of models which propose a correlation between electromigration resistance an...
The range of microstructural effects on thin film and interconnect properties is briefly described, ...
This paper describes fine-grained Mg containing A1-Si alloys, which have an electromigration resista...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The reliability of microelectronic systems is often limited by electromigration failure in Al-based ...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
Electromigration is one of the most important reliability issues in microelectronics. Material trans...
In this dissertation, the effects of temperature and interconnect properties on copper metallization...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Under similar test conditions, the electromigration reliability of Al and Cu metallization interconn...
170 p.With changing materials systems and interconnect architectures from Al based metallization to ...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Electrical measurements of test structures of Al-0.5%Cu interconnects were performed as a function o...
A brief review is given of models which propose a correlation between electromigration resistance an...
The range of microstructural effects on thin film and interconnect properties is briefly described, ...
This paper describes fine-grained Mg containing A1-Si alloys, which have an electromigration resista...