Add to ORKGThesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1984.MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING.Includes bibliographical references.by John James Paulos.Ph.D
Capacitance-voltage (C-V) gate characteristics of power metal-oxide-semiconductor field-effect trans...
In this paper the capacitance components of the PSP compact model which is selected as successor of ...
Abstract—In compact transistor modeling for circuit simula-tion, the capacitances of conventional MO...
All in-text references underlined in blue are linked to publications on ResearchGate, letting you ac...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Catering to a large undergraduate laboratory class requires the experiments to be robust, low mainte...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
This thesis describes the theory, simulation and experimental implementation of a method by which an...
This chapter builds a deep understanding of the modern MOS (metal–oxide–semiconductor) structures. T...
Abstract — In compact transistor modeling for circuit simula-tion, the capacitances of conventional ...
In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices ...
In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices ...
Short channel effects on the gate capacitance of nanowire trigate MOS field-effect transistors are ...
The gate-to-source and gate-to-drain capacitance of long-and short-channel n-MOSFET's have been meas...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Capacitance-voltage (C-V) gate characteristics of power metal-oxide-semiconductor field-effect trans...
In this paper the capacitance components of the PSP compact model which is selected as successor of ...
Abstract—In compact transistor modeling for circuit simula-tion, the capacitances of conventional MO...
All in-text references underlined in blue are linked to publications on ResearchGate, letting you ac...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Catering to a large undergraduate laboratory class requires the experiments to be robust, low mainte...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
This thesis describes the theory, simulation and experimental implementation of a method by which an...
This chapter builds a deep understanding of the modern MOS (metal–oxide–semiconductor) structures. T...
Abstract — In compact transistor modeling for circuit simula-tion, the capacitances of conventional ...
In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices ...
In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices ...
Short channel effects on the gate capacitance of nanowire trigate MOS field-effect transistors are ...
The gate-to-source and gate-to-drain capacitance of long-and short-channel n-MOSFET's have been meas...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Capacitance-voltage (C-V) gate characteristics of power metal-oxide-semiconductor field-effect trans...
In this paper the capacitance components of the PSP compact model which is selected as successor of ...
Abstract—In compact transistor modeling for circuit simula-tion, the capacitances of conventional MO...