InP was amorphized by ion irradiation in two very different regimes: (i) 185 MeV Au irradiation, where the energy loss was predominantly via inelastic processes (electronic stopping), or (ii) Se irradiation in an energy range of 0.08-7 MeV, where elastic processes (nuclear stopping) were dominant. The structural parameters of the amorphous phase were determined for as-irradiated and thermally relaxed samples using extended x-ray absorption fine structure spectroscopy. Despite the fundamentally different energy transfer mechanisms, no significant difference in the atomic structure of the two amorphized samples was observed. We attribute this result to a common "melt and quench" process responsible for amorphization. In fact, the measured str...
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced s...
InP (001) samples were irradiated with 200 MeV Au ions at different fluences. The surface nanotopogr...
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray ...
InP was amorphized by ion irradiation in two very different regimes: (i) 185 MeV Au irradiation, whe...
Structural parameters of InP amorphised by electronic energy deposition were determined using extend...
Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphi...
Extended x-ray absorption fine structure measurements have been used to characterize the low-tempera...
Extended x-ray absorption fine structure measurements have been used to characterize the low-tempera...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
InP 001 wafers were irradiated at room temperature and at liquid nitrogen temperature with swift A...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Two microscopic analytical techniques, extended X-ray absorption fine structure (EXAFS) and perturbe...
Amorphization has been studied in electron- (e/sup -/) and ion-irradiated Si. Si irradiated at <10 K...
Rutherford Backscattering Spectrometry/Channeling and Extended X-ray Absorption Fine Structure measu...
InP (001) samples were irradiated with 200 MeV Au ions at different uences. The surface nanotopogra...
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced s...
InP (001) samples were irradiated with 200 MeV Au ions at different fluences. The surface nanotopogr...
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray ...
InP was amorphized by ion irradiation in two very different regimes: (i) 185 MeV Au irradiation, whe...
Structural parameters of InP amorphised by electronic energy deposition were determined using extend...
Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphi...
Extended x-ray absorption fine structure measurements have been used to characterize the low-tempera...
Extended x-ray absorption fine structure measurements have been used to characterize the low-tempera...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
InP 001 wafers were irradiated at room temperature and at liquid nitrogen temperature with swift A...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Two microscopic analytical techniques, extended X-ray absorption fine structure (EXAFS) and perturbe...
Amorphization has been studied in electron- (e/sup -/) and ion-irradiated Si. Si irradiated at <10 K...
Rutherford Backscattering Spectrometry/Channeling and Extended X-ray Absorption Fine Structure measu...
InP (001) samples were irradiated with 200 MeV Au ions at different uences. The surface nanotopogra...
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced s...
InP (001) samples were irradiated with 200 MeV Au ions at different fluences. The surface nanotopogr...
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray ...