Add to ORKGDeep level transient spectroscopy (DLTS) has been applied to defect centres in γ-ray compensated germanium that has been subjected to long-term annealing at room temperature. Deep donor levels (Ec - 0.36 eV Ec - 0.20 eV) have been observed for the first time; annealing at 675ºC for 3 hours increased their concentration in proportion to the free carrier density indicating stable defect-impurity complexes. Recently irradiated samples from the original material have not shown these levels. The results support Russian work on the compensation mechanism - the formation of electically inactive vacancy-donor complexes
The high carrier (drift) mobility makes Ge an interesting material for use in advanced electronic de...
A deep level transient capacitance spectroscopy (DLTS) system modified for the measurement of transi...
Ce travail consiste en une tentative de ré-examiner les propriétés électroniques du Fe, Cr et Au au ...
The last decades germanium is regaining importance as active layer in semiconductor technology becau...
Its high carrier drift mobility, low band gap and high atomic number make germanium suited for many ...
Its high carrier drift mobility, low band gap and high atomic number make germanium suited for many ...
Due to the high carrier mobility in Ge, it is more and more used as active semiconducting layer in a...
Due to the high carrier mobility in Ge, it is more and more used as active semiconducting layer in a...
Recent advances in semiconductor growth techniques have led to the production of high quality Ge tha...
This thesis describes experiments on the behaviour of deep level defects in the semiconductors Ge, S...
This thesis describes experiments on the behaviour of deep level defects in the semiconductors Ge, S...
This thesis describes experiments on the behaviour of deep level defects in the semiconductors Ge, S...
All p-type Ge grown by the Czochralski technique from silica crucibles under an H sub 2 atmosphere s...
Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infr...
Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infr...
The high carrier (drift) mobility makes Ge an interesting material for use in advanced electronic de...
A deep level transient capacitance spectroscopy (DLTS) system modified for the measurement of transi...
Ce travail consiste en une tentative de ré-examiner les propriétés électroniques du Fe, Cr et Au au ...
The last decades germanium is regaining importance as active layer in semiconductor technology becau...
Its high carrier drift mobility, low band gap and high atomic number make germanium suited for many ...
Its high carrier drift mobility, low band gap and high atomic number make germanium suited for many ...
Due to the high carrier mobility in Ge, it is more and more used as active semiconducting layer in a...
Due to the high carrier mobility in Ge, it is more and more used as active semiconducting layer in a...
Recent advances in semiconductor growth techniques have led to the production of high quality Ge tha...
This thesis describes experiments on the behaviour of deep level defects in the semiconductors Ge, S...
This thesis describes experiments on the behaviour of deep level defects in the semiconductors Ge, S...
This thesis describes experiments on the behaviour of deep level defects in the semiconductors Ge, S...
All p-type Ge grown by the Czochralski technique from silica crucibles under an H sub 2 atmosphere s...
Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infr...
Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infr...
The high carrier (drift) mobility makes Ge an interesting material for use in advanced electronic de...
A deep level transient capacitance spectroscopy (DLTS) system modified for the measurement of transi...
Ce travail consiste en une tentative de ré-examiner les propriétés électroniques du Fe, Cr et Au au ...