Add to ORKGIncludes bibliographical references (p. 155-163).Research supported by Joint Services Electronics Program DAAL03-89-C-0001 Research supported by National Science Foundation ECS 87-09806Kathleen R. Early
X-ray lithography with wavelengths between 0.2 and 5 nm provides both high-structural resolution as ...
Analytical and numerical methods are used to examine photoelectron doses and their effect on the dim...
Along with the introduction of the 32 nm technology node in the next years, the methods for correcti...
Image resolution in x-ray proximity printing is influenced by diffraction, photo and Auger electron ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The possibility and usefulness of proximity correction in 100-nm-regime X-ray lithography was examin...
The electron energy of, e.g., 50 keV has advantages over less electron energy for X-ray mask substra...
It is time to revisit X-ray. By enhancing, in the Near Field, Proximity X-ray Lithography (PXL), the...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...
By using the near field in proximity x-ray lithography (PXL), a technique is demonstrated that exten...
Photolithography is one of the earliest technologies used to transfer patterns to a substrate. It is...
Image intensity profile and resist profile calculations using the X-ray modeling and simulation prog...
Resolution in x-ray lithography is influenced mainly by the exposure geometry, the resist's behavior...
The optimal conditions to print the 0.13 mu m line and space are presented for newly constructed x-r...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
X-ray lithography with wavelengths between 0.2 and 5 nm provides both high-structural resolution as ...
Analytical and numerical methods are used to examine photoelectron doses and their effect on the dim...
Along with the introduction of the 32 nm technology node in the next years, the methods for correcti...
Image resolution in x-ray proximity printing is influenced by diffraction, photo and Auger electron ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The possibility and usefulness of proximity correction in 100-nm-regime X-ray lithography was examin...
The electron energy of, e.g., 50 keV has advantages over less electron energy for X-ray mask substra...
It is time to revisit X-ray. By enhancing, in the Near Field, Proximity X-ray Lithography (PXL), the...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...
By using the near field in proximity x-ray lithography (PXL), a technique is demonstrated that exten...
Photolithography is one of the earliest technologies used to transfer patterns to a substrate. It is...
Image intensity profile and resist profile calculations using the X-ray modeling and simulation prog...
Resolution in x-ray lithography is influenced mainly by the exposure geometry, the resist's behavior...
The optimal conditions to print the 0.13 mu m line and space are presented for newly constructed x-r...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
X-ray lithography with wavelengths between 0.2 and 5 nm provides both high-structural resolution as ...
Analytical and numerical methods are used to examine photoelectron doses and their effect on the dim...
Along with the introduction of the 32 nm technology node in the next years, the methods for correcti...