Add to ORKGA research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been fabricated on Si using Ge/GeSi/Si virtual substrates. The lasers fabricated on bulk GaAs showed similar output characteristics as those on Si. The GaAs/AlGaAs lasers fabricated on Si emitted at 858nm and had room temperature cw lifetimes of ~4hours. Straight optical links integrating an LED emitter, waveguide and detector exhibited losses of approximately 144dB/cm. A process for fabrication of a novel CMOS-compatible platform that integrates III-V or Ge layers with Si is demonstrated. Thin Ge layers have been transferred from ...
The synergies associated with integrating Si-based CMOS ICs and III-V-material-based light-emitting ...
We summarize our work on creating substrate platforms, processes, and devices for the monolithic int...
This thesis investigates the growth, fabrication, and performance of III-V semiconductorquantum dot ...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Germanium (Ge) laser on Ge-on-insulator (GOI) shows great promises as the light source in photonic i...
III-V Quantum-dot (QD) materials and lasers directly grown on Si platform are the most prospective c...
Silicon (Si) has been the most prominent material for electronic where complementary metal-oxide-sem...
The paper presents the results of the application of MOCVD growth technique for formation of the GaA...
The production of vertical-cavity surface-emitting lasers (VCSELs), which are widely used in short-r...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Over the past two decades, researchers have devoted great efforts on Si photonics to overcome the co...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 20...
CMOS-compatible III–V lasers integrated on silicon are a crucial step to reduce power consumption an...
CMOS-compatible III–V lasers integrated on silicon are a crucial step to reduce power consumption an...
A number of important breakthroughs in the past decade have focused attention on Si as a photonic pl...
The synergies associated with integrating Si-based CMOS ICs and III-V-material-based light-emitting ...
We summarize our work on creating substrate platforms, processes, and devices for the monolithic int...
This thesis investigates the growth, fabrication, and performance of III-V semiconductorquantum dot ...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Germanium (Ge) laser on Ge-on-insulator (GOI) shows great promises as the light source in photonic i...
III-V Quantum-dot (QD) materials and lasers directly grown on Si platform are the most prospective c...
Silicon (Si) has been the most prominent material for electronic where complementary metal-oxide-sem...
The paper presents the results of the application of MOCVD growth technique for formation of the GaA...
The production of vertical-cavity surface-emitting lasers (VCSELs), which are widely used in short-r...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Over the past two decades, researchers have devoted great efforts on Si photonics to overcome the co...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 20...
CMOS-compatible III–V lasers integrated on silicon are a crucial step to reduce power consumption an...
CMOS-compatible III–V lasers integrated on silicon are a crucial step to reduce power consumption an...
A number of important breakthroughs in the past decade have focused attention on Si as a photonic pl...
The synergies associated with integrating Si-based CMOS ICs and III-V-material-based light-emitting ...
We summarize our work on creating substrate platforms, processes, and devices for the monolithic int...
This thesis investigates the growth, fabrication, and performance of III-V semiconductorquantum dot ...