(Invited) area-selective atomic layer deposition : role of surface chemistry

Area-selective atomic layer deposition is being considered as the next paradigm shift in device fabrication. Besides semiconductor manufacturing, area-selective ALD presents unique opportunities in catalysis and large-area electronics applications. In this contribution, the results of recently developed area-selective ALD processes for In2O3 and ZnO are revisited. These approaches rely on substrate-dependent nucleation that originates from chemoselective precursor adsorption. Here, we focus on the role of thermodynamics and kinetics of the surface reactions in enabling area-selective deposition. Thermodynamics and kinetics of reactions were calculated by density functional theory (DFT) methods. We believe that our findings can be valuable in understanding area-selective ALD processes at a molecular level, the mechanisms underpinning the chemoselective adsorption and thus in advancing the field