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GaN grown on SiC by MOCVD: materials for HEMT applications

Rudziński, M.

Publication date

January 2008

Publisher

[S.l. : s.n.]

Abstract

Contains fulltext : 147009.pdf (Publisher’s version ) (Open Access)XII, 147 p

Extracted data

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Vlieg, E.

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Contains fulltext : 92260.pdf (publisher's version ) (Open Access

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Grzegorczyk, A.P.

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Sarazin, Nicolas
Peschang, M.
Morvan, Erwan
Delage, Sylvain Laurent
Di Persio, J.
Quéré, Raymond
Grimbert, B.
Hoel, Virginie
Delos, E.
Ducatteau, Damien
Gaquière, Christophe

May 2004

International audienceThis paper reports on the LP-MOCVD growth optimisation of GaAlN/GaN heterostru...

Influence of the substrate misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD

Rudzinski, M.
Hageman, P.R.
Grzegorczyk, A.P.
Macht, L.J.
Rodle, T.C.
Jos, H.F.F.
Larsen, P.K.

January 2005

Contains fulltext : 32640.pdf (publisher's version ) (Closed access)4 p

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Dreumel, G.W.G. van
Buijnsters, J.G.
Bohnen, T.
Meulen, J.J. ter
Hageman, P.R.
Enckevort, W.J.P. van
Vlieg, E.

January 2009

Contains fulltext : 75292.pdf (publisher's version ) (Closed access)5 p

Material properties of GaN grown by MOCVD

Liu, W.
Li, M.-F.
Feng, Z.-C.
Chua, S.-J.
Akutsu, N.
Matsumoto, K.

January 1999

10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-0Surface and Interface Analysis281150-154SIAN

Manga: Manufacturable GaN

M., Mikulla
S., Storm
N., Henelius
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M., Kuball

January 2011

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Tengborn, E.
Rummukainen, M.
Tuomisto, F.
Saarinen, K.
Rudzinski, M.
Hageman, P.R.
Larsen, P.K.
Nordlund, A.

January 2006

Contains fulltext : 35900.pdf (publisher's version ) (Open Access

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.

Kurtz, Steven Ross
Follstaedt, David Martin
Wright, Alan Francis
Baca, Albert G.
Briggs, Ronald D.
Provencio, Paula Polyak
Missert, Nancy A.
Allerman, Andrew Alan
Marsh, Phil F.
Koleske, Daniel David
Lee, Stephen Roger
Shul, Randy John
Seager, Carleton Hoover
Tigges, Christopher P.

December 2005

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next ge...