Dielectrophoretic alignment is found to be a simple and efficient method to deposit the solution prepared ZnO nanowires onto micro hot plate substrates. Due to the strong surface effects, positive temperature coefficient for resistance was encountered with ZnO nanowires in the high temperature range (>250 degrees C). The response to ammonia (NH3) was evaluated in isothermal and temperature-pulsed operation mode; the relative higher response observed in the latter case demonstrates that the use of this methodology is a good strategy to improve the performance of metal oxide sensors based on nanomaterials. Here, we evaluate the response to NH3 and qualitatively describe the sensing mechanism in temperature-pulsed mode, highlighting the main d...
This project involved the study of metal-oxide nanowires as resistive-type gas sensors and how the f...
Room-temperature gas sensors are attracting attention because of their low power consumption, safe o...
Zinc oxide nanowires are configured as n-channel FETs. These transistors are implemented as chemical...
Dielectrophoretic alignment is found to be a simple and efficient method to deposit the solution pre...
All rights reserved. Dielectrophoretic alignment is found to be a simple and efficient method to dep...
Dielectrophoretic alignment is found to be a simple and efficient method to deposit the solution pre...
This thesis presents the results of applying new strategies to understand the mechanism and explore ...
The well-constituted hierarchical arrangement of hexagonal ZnO nanowires with diameters <180 nm and ...
The well-constituted hierarchical arrangement of hexagonal ZnO nanowires with diameters <180 nm and ...
The well-constituted hierarchical arrangement of hexagonal ZnO nanowires with diameters <180 nm and ...
Zinc oxide nanowires were configured as n-channel field-effect transistors. These transistors were i...
AbstractZinc oxides (ZnO) nanowires were successfully deposited on plastic low-power micro-hotplates...
AbstractThe authors manufactured conductometric type gas sensors based on ZnO nanostructures. Using ...
Zinc oxide (ZnO) based nanostructures represent an important class of gas sensor materials, due to t...
Zinc oxide (ZnO) based nanostructures represent an important class of gas sensor materials, due to t...
This project involved the study of metal-oxide nanowires as resistive-type gas sensors and how the f...
Room-temperature gas sensors are attracting attention because of their low power consumption, safe o...
Zinc oxide nanowires are configured as n-channel FETs. These transistors are implemented as chemical...
Dielectrophoretic alignment is found to be a simple and efficient method to deposit the solution pre...
All rights reserved. Dielectrophoretic alignment is found to be a simple and efficient method to dep...
Dielectrophoretic alignment is found to be a simple and efficient method to deposit the solution pre...
This thesis presents the results of applying new strategies to understand the mechanism and explore ...
The well-constituted hierarchical arrangement of hexagonal ZnO nanowires with diameters <180 nm and ...
The well-constituted hierarchical arrangement of hexagonal ZnO nanowires with diameters <180 nm and ...
The well-constituted hierarchical arrangement of hexagonal ZnO nanowires with diameters <180 nm and ...
Zinc oxide nanowires were configured as n-channel field-effect transistors. These transistors were i...
AbstractZinc oxides (ZnO) nanowires were successfully deposited on plastic low-power micro-hotplates...
AbstractThe authors manufactured conductometric type gas sensors based on ZnO nanostructures. Using ...
Zinc oxide (ZnO) based nanostructures represent an important class of gas sensor materials, due to t...
Zinc oxide (ZnO) based nanostructures represent an important class of gas sensor materials, due to t...
This project involved the study of metal-oxide nanowires as resistive-type gas sensors and how the f...
Room-temperature gas sensors are attracting attention because of their low power consumption, safe o...
Zinc oxide nanowires are configured as n-channel FETs. These transistors are implemented as chemical...