In this study, we report the growth of core-shell GaAsP nanowires using metal-organic chemical vapor deposition. The grown core-shell nanowires were examined by detailed electron microscopy, revealing that the P concentration in the nanowire cores is higher than that in the shells. Au catalysts enhanced the local decomposition of PH3, leading to relevant high P incorporation in the nanowire cores during nanowire growth. These core-shell GaAsP nanowires exhibit enhanced electrical conductivity when compared with uniform GaAsP nanowires. This study provides an approach to enhance the electrical conductivity of III-V semiconductor nanowires
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
In this study, we report the growth of core–shell GaAsP nanowires using metal–organic chemical vapor...
Semiconductor nanowires (NWs) offer a wide range of opportunities to explore the fundamentals of the...
High density (In)GaAs/GaAs/AlGaAs nanowires (NWs) consisting of n-type core and p-type shell have be...
The growth of III-V semiconductor core-shell nanowires by Au-catalyzed metal organic chemical vapor ...
GaAs nanowires were grown using metal organic chemical vapor deposition (MOCVD) system at low pressu...
Semiconductor nanowires are promising candidates for the emerging nano-scale optoelectronics. They p...
The use of compound semiconductor heterostructures to create electron confinement has enabled the hi...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
GaAs, AlGaAs and GaAs-AlGaAs core-shell nanowires (NWs) may find potential applications in the field...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...
Nowadays, III-V compound semiconductor nanowires (NWs) have attracted extensive research interest be...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
In this study, we report the growth of core–shell GaAsP nanowires using metal–organic chemical vapor...
Semiconductor nanowires (NWs) offer a wide range of opportunities to explore the fundamentals of the...
High density (In)GaAs/GaAs/AlGaAs nanowires (NWs) consisting of n-type core and p-type shell have be...
The growth of III-V semiconductor core-shell nanowires by Au-catalyzed metal organic chemical vapor ...
GaAs nanowires were grown using metal organic chemical vapor deposition (MOCVD) system at low pressu...
Semiconductor nanowires are promising candidates for the emerging nano-scale optoelectronics. They p...
The use of compound semiconductor heterostructures to create electron confinement has enabled the hi...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
GaAs, AlGaAs and GaAs-AlGaAs core-shell nanowires (NWs) may find potential applications in the field...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...
Nowadays, III-V compound semiconductor nanowires (NWs) have attracted extensive research interest be...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...