Heavy-ion irradiation effects on advanced perpendicular anisotropy spin-transfer torque magnetic tunnel junction
- Coi, Odilia
- Di Pendina, Gregory
- Sousa, Ricardo
- Adrianjohany, Nomena
- Dangla, David
- Ecoffet, Robert
- Torres, Lionel
Publication date
May 2021
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceThis paper investigates laser and heavy ion irradiation effects on Perpendicular Magnetic Anisotropy Spin Transfer Torque Magnetic Tunnel Junction devices (PMA STT-MTJ). The Radiative campaign will take place at the Université Catholique de Louvain (UCL) facility in April 2020. The considered devices consist of STT p-MTJs purely magnetic memories and they were fabricated using the most advanced CoFeB-MgO MTJ technology. Single-event upset (SEU) tolerance and modification of magnetic properties will be deeply investigated and presented in the final paper
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