Structural determination for H<sub>2</sub>O adsorption on Si(001)2 × 1 using scanned-energy mode photoelectron diffraction
- Franco, N.
- Chrost, J.
- Avilaa, J.
- Asensioa, M.
- Müller, C.
- Dudzik, E.
- Patchett, A.
- McGovern, I.
- Giebel, T.
- Lindsay, R.
- Fritzsche, V.
- Bradshaw, A.
- Woodruff, D.
DOIAbstract
Using scanned-energy-mode photoelectron diffraction we have determined the local adsorption geometry of the OH fragments adsorbed on Si(100)(2 × 1) surface. On this substrate water is known to adsorb dissociatively even at low temperature (90 K), which gives rise to a surface layer comprising coadsorbed OH and H species. The OH fragments are found to be adsorbed in off-atop sites at a dimerised surface Si atom with Osingle bondSi bond-lengths of 1.7 ± 0.1Å and bond-angles relative to the surface normal of 22 ± 5°
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