International audienceUsing elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how to use this function to transform qualitative HAADF-STEM images of InGaN layers into precise, quantitative chemical maps of the indium composition. The maps obtained in this way combine the resolution of HAADF-STEM and the chemical precision of EDX. We illustrate the potential of such chemical maps by using them to investigate nanometer-scale fluctuations in the indium composition and their impact on the growth of epitaxial In...
The scanning transmission electron microscope (STEM) is an extraordinarily powerful tool for materia...
We have applied high resolution chemical imaging in a transmission electron microscope to study comp...
We present a detailed examination of a multiple InxGa1−xN quantum well (QW) structure for optoelectr...
International audienceUsing elastic scattering theory we show that a small set of energy dispersive ...
We present a simple and robust method to acquire quantitative maps of compositional fluctuations in ...
The quaternary semiconductor InGaNAs is of technological interest for development of solar cells as ...
We have applied our previous method of self-consistent k*-factors for absorption correction in energ...
International audienceTo unambiguously evaluate the indium and nitrogen concentrations in In x Ga 1 ...
Using wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser (EPMA) the...
In this contribution, the indium concentration profile of an In xGa1-xN/GaN five-fold multi quantum ...
We demonstrate a method to determine the indium concentration, x, of In x Ga1-x N thin films by comb...
A model-based method is proposed to relatively quantify the chemical composition of atomic columns u...
A new method of absorption correction for energy-dispersive X-ray spectroscopy in a transmission ele...
We use structural and analytical transmission electron microscopy to study the scale on which InGaN ...
cited By 7International audienceWe present a method using high-angle annular dark field scanning tra...
The scanning transmission electron microscope (STEM) is an extraordinarily powerful tool for materia...
We have applied high resolution chemical imaging in a transmission electron microscope to study comp...
We present a detailed examination of a multiple InxGa1−xN quantum well (QW) structure for optoelectr...
International audienceUsing elastic scattering theory we show that a small set of energy dispersive ...
We present a simple and robust method to acquire quantitative maps of compositional fluctuations in ...
The quaternary semiconductor InGaNAs is of technological interest for development of solar cells as ...
We have applied our previous method of self-consistent k*-factors for absorption correction in energ...
International audienceTo unambiguously evaluate the indium and nitrogen concentrations in In x Ga 1 ...
Using wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser (EPMA) the...
In this contribution, the indium concentration profile of an In xGa1-xN/GaN five-fold multi quantum ...
We demonstrate a method to determine the indium concentration, x, of In x Ga1-x N thin films by comb...
A model-based method is proposed to relatively quantify the chemical composition of atomic columns u...
A new method of absorption correction for energy-dispersive X-ray spectroscopy in a transmission ele...
We use structural and analytical transmission electron microscopy to study the scale on which InGaN ...
cited By 7International audienceWe present a method using high-angle annular dark field scanning tra...
The scanning transmission electron microscope (STEM) is an extraordinarily powerful tool for materia...
We have applied high resolution chemical imaging in a transmission electron microscope to study comp...
We present a detailed examination of a multiple InxGa1−xN quantum well (QW) structure for optoelectr...