Negatively Biased Field Effect Transistor Used As a Microwave Detector

The majority of\u27 today\u27s microwave detectors are based on microwave diodes. The research presented in this thesis develops the theory of a new, more sensitive detector based on a negatively biased microwave FET. The theory construction of was then applied to the design and a FET microwave detector. The design resulted in a detector that has an average tangential signal sensitivity of -58.5dBm at the design frequency and a dynamic range of 41.5dB. Finally the FET detector was compared to a diode microwave detector under resistive loads of formula . When under the same load conditions and at the designed and at the designed frequency of 8.6GHz the FET detector surpassed the FET diode detector in sensitivity by a minimum of 3.5dB. The dynamic range of the FET detector was 6.9dB less than for the diode detector. However the dynamic range was still large, 41.5 d