Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for designing non-volatile Logic-in-Memory (LIM) architectures. This work explores a smart material implication (SIMPLY) LIM scheme based on nanoscale STT-MTJs. The SIMPLY architecture is benchmarked against the conventional material implication (IMPLY) logic. Obtained results prove that for similar performance the STT-MTJ based SIMPLY scheme ensures more reliable operation (i.e., lower error rate by more than three orders of magnitude) and an energy saving of -70% than its IMPLY counterpart, at the only cost of minimal area overhead
Magnetic Logic Devices have the advantage of non-volatility, radiation hardness, scalability down to...
International audienceThe high density of on-chip nonvolatile memory provided by memristive elements...
International audienceHigh power issues have become the main drawbacks of CMOS logic circuits as tec...
Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for des...
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-effici...
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-effici...
Low-power smart devices are becoming pervasive in our world. Thus, relevant research efforts are dir...
Abstract—The use of spin-transfer torque (STT) devices for memory design has been a subject of resea...
With traditional complementary metal oxide semiconductor (CMOS)-based devices and switching methods...
The need for processing the continuously growing amount of data that is produced every day is promot...
Magnetic Tunnel Junction(MTJ) is a spintronic device that offers non volatile memory\ud capable of f...
Spin-transfer torque (STT) random access memory has been researched as a promising alternative for s...
The Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) has opened new doors as an...
In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of ...
Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing...
Magnetic Logic Devices have the advantage of non-volatility, radiation hardness, scalability down to...
International audienceThe high density of on-chip nonvolatile memory provided by memristive elements...
International audienceHigh power issues have become the main drawbacks of CMOS logic circuits as tec...
Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for des...
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-effici...
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-effici...
Low-power smart devices are becoming pervasive in our world. Thus, relevant research efforts are dir...
Abstract—The use of spin-transfer torque (STT) devices for memory design has been a subject of resea...
With traditional complementary metal oxide semiconductor (CMOS)-based devices and switching methods...
The need for processing the continuously growing amount of data that is produced every day is promot...
Magnetic Tunnel Junction(MTJ) is a spintronic device that offers non volatile memory\ud capable of f...
Spin-transfer torque (STT) random access memory has been researched as a promising alternative for s...
The Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) has opened new doors as an...
In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of ...
Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing...
Magnetic Logic Devices have the advantage of non-volatility, radiation hardness, scalability down to...
International audienceThe high density of on-chip nonvolatile memory provided by memristive elements...
International audienceHigh power issues have become the main drawbacks of CMOS logic circuits as tec...