An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in the Mason model, adding a dispersive a transmission line to model the Lamb waves along the lateral dimensions of the resonator. The lateral perturbation of the longitudinal strain is added into the nonlinear constitutive relations. Validation of the model is performed with H2 measurements of Type I rectangular SMR devices.Peer ReviewedPostprint (published version
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
For a three-dimensional description of rectangular BAW resonators, a simple vibrating membrane model...
International audienceInterest in thin-film bulk acoustic wave resonator (FBAR) devices is driven by...
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, deg...
A simple model is developed for calculating lateral acoustical coupling between adjacent thin film B...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances i...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
For a three-dimensional description of rectangular BAW resonators, a simple vibrating membrane model...
International audienceInterest in thin-film bulk acoustic wave resonator (FBAR) devices is driven by...
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, deg...
A simple model is developed for calculating lateral acoustical coupling between adjacent thin film B...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances i...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
For a three-dimensional description of rectangular BAW resonators, a simple vibrating membrane model...
International audienceInterest in thin-film bulk acoustic wave resonator (FBAR) devices is driven by...