The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallization scheme into the surrounding silicon substructure. However, little is known about the response of TiW to high-temperature events or its behavior when exposed to air. Here, a combined soft and hard x-ray photoelectron spectroscopy (XPS) characterization approach is used to study the influence of post-deposition annealing and titanium concentration on the oxidation behavior of a 300 nm-thick TiW film. The combination of both XPS techniques allows for the assessment of the chemical state and elemental composition across the surface and bulk of the TiW...
The object of research is the analytical description of the phenomena in the near-surface layer, whi...
The W-Ti thin films are deposited by the dc Ar+ sputtering of W(70%)-Ti(30%) a.t. target on silicon ...
Titanium specimens of commercial purity were exposed at 1100 to 1400 F to laboratory air for times u...
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semico...
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semico...
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, o...
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress or...
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device arc...
TiO2 and WO3 are two of the most important earth-abundant electronic materials with applications in ...
Thin Pt/TiOx films have proven to be chemically sensitive to their gap environment. To better unders...
Substoichiometric tungsten oxide films of approximately 10 nm thickness deposited with pulsed laser ...
The relatively low oxidation resistance and subsequent surface embrittlement have often limited the ...
In this study, the effect of thermal oxidation on the properties of the surface of titanium alloys w...
Isothermal oxidation testing of near α titanium alloys VT18U, VT20, Ti6Al7Nb and Ti6242S was perform...
This research focuses on analysing the interaction between three commercially used diffusion coating...
The object of research is the analytical description of the phenomena in the near-surface layer, whi...
The W-Ti thin films are deposited by the dc Ar+ sputtering of W(70%)-Ti(30%) a.t. target on silicon ...
Titanium specimens of commercial purity were exposed at 1100 to 1400 F to laboratory air for times u...
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semico...
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semico...
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, o...
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress or...
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device arc...
TiO2 and WO3 are two of the most important earth-abundant electronic materials with applications in ...
Thin Pt/TiOx films have proven to be chemically sensitive to their gap environment. To better unders...
Substoichiometric tungsten oxide films of approximately 10 nm thickness deposited with pulsed laser ...
The relatively low oxidation resistance and subsequent surface embrittlement have often limited the ...
In this study, the effect of thermal oxidation on the properties of the surface of titanium alloys w...
Isothermal oxidation testing of near α titanium alloys VT18U, VT20, Ti6Al7Nb and Ti6242S was perform...
This research focuses on analysing the interaction between three commercially used diffusion coating...
The object of research is the analytical description of the phenomena in the near-surface layer, whi...
The W-Ti thin films are deposited by the dc Ar+ sputtering of W(70%)-Ti(30%) a.t. target on silicon ...
Titanium specimens of commercial purity were exposed at 1100 to 1400 F to laboratory air for times u...