On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

A controllable mechanism of forming extremely low resistance nonalloyed ohmic contacts to group III V compound semiconductors

Stareev, G.
Künzel, H.
Dortmann, G.

January 1993

This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...

Electrical Characteristics and Thermal Stability of Platinum Silicide-to-Silicon Ohmic Contacts Metalized with Tungsten

A. K. Sinha

August 2016

The present work was undertaken in order to determine the effect of var i-ous thermal treatments up ...

Titanium contacts on N-type silicon

Wilkinson, John Malcolm

January 2015

The current transport mechanism usually assumed to be valid for metal silicon Schottky barriers is t...

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

Sachenкo, А. V.
Belyaev, А. Е.
Boltovets, N. S.
Vіnogradov, А. О.
Pіlіpenкo, V. А.
Sheremet, V. N.

January 2014

We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) fo...

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenкo, А. V.
Belyaev, А. Е.
Boltovets, N. S.
Konaкova, R. V.
Kudryк, Y. Y.
Novytsкyі, S. V.
Sheremet, V. N.
Lі, J.
Vіtusevіch, S. А.

January 2012

A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is ...

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Sachenko, A.V.
Belyaev, A.E.
Boltovets, N.S.
Vinogradov, A.O.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya
Kuchuk, A.V.
Sheremet, V.N.
Vitusevich, S.A.

The temperature dependence of contact resistivity rho(c) in lapped silicon specimens with donor conc...

A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

Sachenкo, А. V.
Belyaev, А. Е.
Boltovets, N. S.
Konaкova, R. V.
Kudryк, Y. Y.
Novytsкyі, S. V.
Sheremet, V. N.
Lі, J.
Vіtusevіch, S. А.

July 2012

About new mechanism of contact resistance formation in ohmic contacts to semiconductors with high d...

Single step ohmic contact for heavily doped n-type silicon

Paul, Febin
Nama Manjunathan, Krishna
Paul, Shashi
Govindarajan, S.

November 2019

The file attached to this record is the author's final peer reviewed version. The Publisher's final ...

Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot

Dhimmar, J.M
Desai, H.N.
Modi, B.P.

January 2016

The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the...

On the Influence of Surface Treatment on Electrical Characteristics of Schottky Diodes

Hamilton, Donald J

January 2003

The effect of surface treatment on electrical characteristics of aluminum-silicon contacts has been ...

Interfacial resistive properties of nickel silicide thin films to doped silicon

Bhaskaran, M
Sriram, S
Holland, A

January 2010

Improved means of electrical access to nanotechnology devices and accurate nanoscale characterizatio...

Interfacial Resistive Properties of Nickel Silicide Thin Films to Doped Silicon

Madhu Bhaskaran
Sharath Sriram
Anthony S Holland

February 2020

Improved means of electrical access to nanotechnology devices and accurate nanoscale characterizatio...

Versatile circular test structure for ohmic contact characterisation

Pan, Y

January 2015

Metal to semiconductor contacts can be divided into two groups: rectifying contacts and non-rectifyi...

A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors

Stareev, G.
Kunzel, H.
Dortmann, G.

January 1993

This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...

Temperature dependence of resistivity of porous silicon formed on N-substrates

Redko, S.V.
Chubenko, E.B.
Klyshko, A.A.
Kholostov, K.I.
Bondarenko, V.P.
Prischepa, S.I.
Trezza, Michela
Cirillo, Carla
Attanasio, Carmine

January 2011

Results of measurement of resistivity of mesoporous silicon formed on n-type substrates in a wide te...

A controllable mechanism of forming extremely low resistance nonalloyed ohmic contacts to group III V compound semiconductors

Stareev, G.
Künzel, H.
Dortmann, G.

January 1993

This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...

Electrical Characteristics and Thermal Stability of Platinum Silicide-to-Silicon Ohmic Contacts Metalized with Tungsten

A. K. Sinha

August 2016

The present work was undertaken in order to determine the effect of var i-ous thermal treatments up ...

Titanium contacts on N-type silicon

Wilkinson, John Malcolm

January 2015

The current transport mechanism usually assumed to be valid for metal silicon Schottky barriers is t...

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

Sachenкo, А. V.
Belyaev, А. Е.
Boltovets, N. S.
Vіnogradov, А. О.
Pіlіpenкo, V. А.
Sheremet, V. N.

January 2014

We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) fo...

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenкo, А. V.
Belyaev, А. Е.
Boltovets, N. S.
Konaкova, R. V.
Kudryк, Y. Y.
Novytsкyі, S. V.
Sheremet, V. N.
Lі, J.
Vіtusevіch, S. А.

January 2012

A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is ...

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Sachenko, A.V.
Belyaev, A.E.
Boltovets, N.S.
Vinogradov, A.O.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya
Kuchuk, A.V.
Sheremet, V.N.
Vitusevich, S.A.

The temperature dependence of contact resistivity rho(c) in lapped silicon specimens with donor conc...

A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

Sachenкo, А. V.
Belyaev, А. Е.
Boltovets, N. S.
Konaкova, R. V.
Kudryк, Y. Y.
Novytsкyі, S. V.
Sheremet, V. N.
Lі, J.
Vіtusevіch, S. А.

July 2012

About new mechanism of contact resistance formation in ohmic contacts to semiconductors with high d...

Single step ohmic contact for heavily doped n-type silicon

Paul, Febin
Nama Manjunathan, Krishna
Paul, Shashi
Govindarajan, S.

November 2019

The file attached to this record is the author's final peer reviewed version. The Publisher's final ...

Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot

Dhimmar, J.M
Desai, H.N.
Modi, B.P.

January 2016

The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the...

On the Influence of Surface Treatment on Electrical Characteristics of Schottky Diodes

Hamilton, Donald J

January 2003

The effect of surface treatment on electrical characteristics of aluminum-silicon contacts has been ...

Interfacial resistive properties of nickel silicide thin films to doped silicon

Bhaskaran, M
Sriram, S
Holland, A

January 2010

Improved means of electrical access to nanotechnology devices and accurate nanoscale characterizatio...

Interfacial Resistive Properties of Nickel Silicide Thin Films to Doped Silicon

Madhu Bhaskaran
Sharath Sriram
Anthony S Holland

February 2020

Improved means of electrical access to nanotechnology devices and accurate nanoscale characterizatio...

Versatile circular test structure for ohmic contact characterisation

Pan, Y

January 2015

Metal to semiconductor contacts can be divided into two groups: rectifying contacts and non-rectifyi...

A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors

Stareev, G.
Kunzel, H.
Dortmann, G.

January 1993

This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...

Temperature dependence of resistivity of porous silicon formed on N-substrates

Redko, S.V.
Chubenko, E.B.
Klyshko, A.A.
Kholostov, K.I.
Bondarenko, V.P.
Prischepa, S.I.
Trezza, Michela
Cirillo, Carla
Attanasio, Carmine

January 2011

Results of measurement of resistivity of mesoporous silicon formed on n-type substrates in a wide te...

A controllable mechanism of forming extremely low resistance nonalloyed ohmic contacts to group III V compound semiconductors

Stareev, G.
Künzel, H.
Dortmann, G.

January 1993

This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...

Electrical Characteristics and Thermal Stability of Platinum Silicide-to-Silicon Ohmic Contacts Metalized with Tungsten

A. K. Sinha

August 2016

The present work was undertaken in order to determine the effect of var i-ous thermal treatments up ...

Titanium contacts on N-type silicon

Wilkinson, John Malcolm

January 2015

The current transport mechanism usually assumed to be valid for metal silicon Schottky barriers is t...

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

Abstract

Extracted data

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

Abstract

Extracted data

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