Study of luminescence of semiconductor nanostructures accrued

This diploma thesis deals with luminescence of silicon nanocrystals prepared by ion-implantation method. Samples have been characterized by time integrated spectroscopy. Time-resolved measurements were also done. We observed two-component photoluminescence with a great difference in decay times. Stretched-exponential decay of the slower one (s) was observed, described and compared to works of other authors. Great attention was paid to nonlinearities of the faster luminescence component ( 100ps) which were obtained by 532nm excitation. We suggested two-photon or two-step excitation model and new experiment to resolve this problem